Metal-sulfur-based air-stable passivation of GaAs with very low surface-state densities

Ashby, Carol I. H.; Zavadil, Kevin R.; Baca, Albert G.; Chang, P.-C.; Hammons, B. E.; Hafich, M. J.
January 2000
Applied Physics Letters;1/17/2000, Vol. 76 Issue 3
Academic Journal
An air-stable electronic surface passivation for GaAs and other III-V compound semiconductors that employs sulfur and a suitable metal ion, e.g., Zn, and that is robust towards plasma dielectric deposition has been developed. Initial improvements in photoluminescence are twice that of S-only treatments and have been preserved for >11 months with SiO[sub x]N[sub y] dielectric encapsulation. Photoluminescence and x-ray photoelectron spectroscopies indicate that the passivation consists of two major components with one being stable for >2 years in air. This process improves heterojunction bipolar transistor current gain for both large and small area devices. © 2000 American Institute of Physics.


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