High rate etching of 4H-SiC using a SF[sub 6]/O[sub 2] helicon plasma

Chabert, P.; Proust, N.; Perrin, J.; Boswell, R. W.; Boswell, R.W.
April 2000
Applied Physics Letters;4/17/2000, Vol. 76 Issue 16
Academic Journal
The etch rate of 4H-SiC in a SF[sub 6] helicon plasma has been investigated as a function of pressure, power injected in the source, substrate bias voltage, and distance between the substrate holder and the helicon source. The highest etch rate yet reported of 1.35 μm/min along with good uniformity on 2 in. SiC substrates was achieved when this distance was minimum. Smooth etched surfaces free of micromasking have been obtained when using a nickel mask and the selectivity SiC/Ni was found to be about 50 under high etch rate conditions. Via holes have been etched to a depth of 330 μm in 4H-SiC substrates. © 2000 American Institute of Physics.


Related Articles

  • The influence of mask thickness on charging damage during overetching. Hwang, Gyeong S.; Giapis, Konstantinos P. // Journal of Applied Physics;7/15/1997, Vol. 82 Issue 2, p572 

    Reports that feature-scale charging simulations during gate electrode overetching in high-density plasmas reveal that the thickness of the insulating mask plays a critical role in charging damage. Description of plasma conditions and microstructure; Microstructure charging simulation and...

  • Role of the chamber wall in low-pressure high-density etching plasmas. O’Neill, James A.; Singh, Jyothi // Journal of Applied Physics;1/15/1995, Vol. 77 Issue 2, p497 

    Presents a study which examined how the chamber wall affects the concentration of gas-phase reactants in high-density etching plasmas. Experimental details; Results; Discussion.

  • Investigation of a 2.45 GHz ECR plasma for ion etching. Eichelberger, M.; Friedrich, L.; Huttel, E.; Wiss, L. // Review of Scientific Instruments;Apr92, Vol. 63 Issue 4, p2394 

    Reactive ion-stream etching of SiO[sub 2] by CF[sub 4] ECR plasma has been investigated using different magnetic configurations. Whereas a permanent multipole field yielded the best results concerning the homogeneity over a large area, the highest etching rates were achieved with a...

  • Dry patterning of InGaN and InAlN. Pearton, S.J.; Abernathy, C.R. // Applied Physics Letters;6/27/1994, Vol. 64 Issue 26, p3643 

    Analyzes the composition dependence of dry etch rates of In[sub x]Ga[sub 1-x]N and In[sub x]Al[sub 1-x]N alloys in both CH[sub 4]/H[sub 2] and Cl[sub 2]/H[sub 2] microwave discharges. Need to develop dry patterning methods; Use of fluorine addition to chlorine plasmas; Advantage of Cl[sub...

  • Alternating fluxes of positive and negative ions from an ion-ion plasma. Kanakasabapathy, Sivananda K.; Overzet, Lawrence J.; Midha, Vikas; Economou, Demetre // Applied Physics Letters;1/1/2001, Vol. 78 Issue 1, p22 

    Relatively electron-free positive- and negative-ion plasmas (ion-ion plasmas) have been achieved in the afterglow of pulsed-power Cl[sub 2] discharges. The application of a low-frequency (20 kHz) bias voltage phase locked to the source power modulation and synchronous with the ion-ion plasma,...

  • Study of oxygen addition to CF3Br reactive ion etching plasmas: Effects on silicon surface chemistry and etching behavior. Bestwick, T. D.; Oehrlein, G. S.; Angell, D.; Jones, P. L.; Corbett, J. W. // Applied Physics Letters;6/5/1989, Vol. 54 Issue 23, p2321 

    The etching of silicon in CF3Br/O2 plasmas has been examined. In situ x-ray photoelectron spectroscopy shows that silicon surfaces etched in CF3Br/O2 plasmas with a proportion of 30% O2 or less are covered with a reaction layer that is mainly due to bromine bonded to silicon. As the proportion...

  • High rate etching of SiC using inductively coupled plasma reactive ion etching in... Khan, F.A.; Adesida, I. // Applied Physics Letters;10/11/1999, Vol. 75 Issue 15, p2268 

    Studies inductively coupled plasma (ICP) reactive ion etching of silicon carbide. Etch rates as a function of substrate bias voltage, ICP coil power and chamber pressure; Anisotropioc etch profiles obtained; Effects of the addition of oxygen on the etch rate.

  • Conductance considerations in the reactive ion etching of high aspect ratio features. Coburn, J. W.; Winters, Harold F. // Applied Physics Letters;12/25/1989, Vol. 55 Issue 26, p2730 

    Very simple vacuum conductance arguments indicate that in the reactive ion etching of high aspect ratio features, the conductance is adequate to allow etch products to flow out of the feature without building up a pressure which would allow gas phase collisions to become important. On the other...

  • Reactive ion etching of copper in SiCl[sub 4]-based plasmas. Howard, B.J.; Steinbruchel, Ch. // Applied Physics Letters;8/19/1991, Vol. 59 Issue 8, p914 

    Examines the reactive ion etching of copper in SiCl[sub 4]-based plasmas. Growth rate of the surface film; Need for an elevated substrate temperature in the etching process; Possibility of copper anisotropic patterning with a polyimide etch mask.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics