TITLE

High rate etching of 4H-SiC using a SF[sub 6]/O[sub 2] helicon plasma

AUTHOR(S)
Chabert, P.; Proust, N.; Perrin, J.; Boswell, R. W.; Boswell, R.W.
PUB. DATE
April 2000
SOURCE
Applied Physics Letters;4/17/2000, Vol. 76 Issue 16
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The etch rate of 4H-SiC in a SF[sub 6] helicon plasma has been investigated as a function of pressure, power injected in the source, substrate bias voltage, and distance between the substrate holder and the helicon source. The highest etch rate yet reported of 1.35 μm/min along with good uniformity on 2 in. SiC substrates was achieved when this distance was minimum. Smooth etched surfaces free of micromasking have been obtained when using a nickel mask and the selectivity SiC/Ni was found to be about 50 under high etch rate conditions. Via holes have been etched to a depth of 330 μm in 4H-SiC substrates. © 2000 American Institute of Physics.
ACCESSION #
4414050

 

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