TITLE

Mode behavior of photopumped AlGaAs-GaAs lasers confined by oxide-semiconductor distributed Bragg reflectors

AUTHOR(S)
Kellogg, D. A.; Kellogg, D.A.; Holonyak, N.; Holonyak Jr., N.; Dupuis, R. D.; Dupuis, R.D.
PUB. DATE
November 2000
SOURCE
Applied Physics Letters;11/13/2000, Vol. 77 Issue 20
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Data are presented on photopumped AlGaAs-GaAs quantum-well (QW) heterostructure lasers with oxide-semiconductor distributed Bragg reflector (DBR) vertical confinement (and Fabry-Perot cleaved edges) that reduces the mode volume and influences the edge emission (EE) spectra. For narrow samples (<=20 μm), with the vertical DBRs "tuned" below the QW recombination transitions (E[sub 1] lowest, E[sub 2] higher), single mode EE operation occurs on E[sub 2] at a wavelength ∼77 meV above the lowest QW energy. For wide samples with an oxide-semiconductor vertical DBR located in a narrow band at the sample cleave edges, the DBR region acts as a spacial and spectral filter, thus increasing the possibility of single-mode EE operation. © 2000 American Institute of Physics.
ACCESSION #
4413891

 

Related Articles

  • Index-guided AlxGa1-xAs-GaAs quantum well heterostructure lasers fabricated by vacancy-enhanced impurity-induced layer disordering from an internal (Si2)y(GaAs)1-y source. Guido, L. J.; Jackson, G. S.; Plano, W. E.; Hsieh, K. C.; Holonyak, N.; Burnham, R. D.; Epler, J. E.; Thornton, R. L.; Paoli, T. L. // Applied Physics Letters;3/9/1987, Vol. 50 Issue 10, p609 

    A unique form of Si impurity-induced layer disordering (Si IILD) is described that utilizes a ‘‘buried’’ Si source, a (Si2)y(GaAs)1-y barrier, and a patterned external source of column III vacancies, an SiO2 cap, to define the layer disordering. This form of Si IILD is...

  • Stable continuous room-temperature laser operation of AlxGa1-xAs-GaAs quantum well heterostructures grown on Si. Nam, D. W.; Holonyak, N.; Hsieh, K. C.; Kaliski, R. W.; Lee, J. W.; Shichijo, H.; Epler, J. E.; Burnham, R. D.; Paoli, T. L. // Applied Physics Letters;7/6/1987, Vol. 51 Issue 1, p39 

    Data are presented demonstrating stable room-temperature continuous (cw) photopumped laser operation of an AlxGa1-xAs-GaAs quantum well heterostructure (QWH) grown on Si by a combination of molecular beam epitaxy and metalorganic chemical vapor deposition. The cw 300 K laser operation of the...

  • Spectral and dynamic characteristics of buried-heterostructure single quantum well (Al,Ga)As lasers. Derry, P. L.; Chen, T. R.; Zhuang, Y. H.; Paslaski, J.; Mittelstein, M.; Vahala, K.; Yariv, A. // Applied Physics Letters;7/25/1988, Vol. 53 Issue 4, p271 

    We demonstrate that, as predicted, (Al,Ga)As single quantum well (SQW) lasers have substantially narrower spectral linewidths than bulk double-heterostructure lasers. We have observed a further major reduction (>3×) in the linewidth of these SQW lasers when the facet reflectivities are...

  • Mapping of local temperatures on mirrors of GaAs/AlGaAs laser diodes. Brugger, Hans; Epperlein, Peter W. // Applied Physics Letters;3/12/1990, Vol. 56 Issue 11, p1049 

    Spatially resolved Raman scattering measurements (<1 μm) have been performed to determine the surface temperature distribution on coated and uncoated facets of ridge-waveguided GaAs/AlGaAs single quantum well graded-index separate-confinement heterostructure lasers. A strong nonlinear...

  • Mobility degradation in a quantum well heterostructure of a GaAs/AlGaAs prototype. Arora, Vijay K.; Mui, David S. L.; Morkoç, H. // Applied Physics Letters;4/20/1987, Vol. 50 Issue 16, p1080 

    Mobility degradation of a quasi-two-dimensional electron gas in a high electric field as shown to arise from the asymmetry in the distribution function of electrons. The critical field for the onset of appreciable mobility degradation is given by ε*=kBT/el=vsat/2μ0, where T is the lattice...

  • Observation of a short optical pulse (<1.3 ps) from a gain-switched quantum well laser. Sogawa, T.; Arakawa, Y.; Tanaka, M.; Sakaki, H. // Applied Physics Letters;10/24/1988, Vol. 53 Issue 17, p1580 

    Short light pulse generation from an optically pumped GaAs/AlGaAs quantum well laser is measured. The shortest pulse width achieved so far is less than 1.3 ps. In addition, it is found that the pulse from varies randomly even when the same excitation condition, which results from stochastic...

  • Si-implanted and disordered stripe-geometry AlxGa1-xAs-GaAs quantum well lasers. Gavrilovic, P.; Meehan, K.; Guido, L. J.; Holonyak, N.; Eu, V.; Feng, M.; Burnham, R. D. // Applied Physics Letters;11/1/1985, Vol. 47 Issue 9, p903 

    The Si impurity is implanted into an AlxGa1-x As-GaAs quantum well heterostructure to form, by impurity-induced layer disordering and donor doping, a stripe-geometry buried heterostructure laser.

  • Large optical nonlinearities in a GaAs/AlGaAs hetero n-i-p-i structure. Kost, A.; Garmire, E.; Danner, A.; Dapkus, P. D. // Applied Physics Letters;2/22/1988, Vol. 52 Issue 8, p637 

    Light-induced changes in the absorption of a multiple quantum well hetero n-i-p-i structure at room temperature have been measured using a pump-probe method. Changes in the absorption coefficient in the quantum wells of more than 2000 cm-1 have been observed with pump intensities as small as 375...

  • Optical transitions and acceptor binding energies in GaAs/AlxGa1-xAs single quantum well heterostructures grown by molecular beam epitaxy. Pearah, P. J.; Klem, J.; Peng, C. K.; Henderson, T.; Masselink, W. T.; Morkoç, H.; Reynolds, D. C. // Applied Physics Letters;7/15/1985, Vol. 47 Issue 2, p166 

    Single quantum wells of varying well size (150-300 Ã…) exhibiting sharp photoluminescence lines were grown by molecular beam epitaxy. Photoluminescence structure and intensity were comparable to high quality multiple quantum wells in that linewidths as low as 0.5 meV and transitions...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics