Effects of growth conditions on the incorporation of oxygen in AlGaN layers grown by plasma assisted molecular beam epitaxy

Elsass, C. R.; Elsass, C.R.; Mates, T.; Heying, B.; Poblenz, C.; Fini, P.; Petroff, P. M.; Petroff, P.M.; DenBaars, S. P.; DenBaars, S.P.; Speck, J. S.; Speck, J.S.
November 2000
Applied Physics Letters;11/13/2000, Vol. 77 Issue 20
Academic Journal
Using secondary ion mass spectroscopy we have shown that oxygen incorporation in AlGaN films is dependent upon the III/V growth conditions and the growth temperature of the films. AlGaN films grown under excess group III conditions (Ga-rich) exhibited step flow growth and at least a factor of 3 less oxygen incorporation than films grown under excess group V (N-rich conditions). We found that oxygen incorporation into AlGaN decreases as the growth temperature is increased. The lowest oxygen levels were achieved by growing at 750 °C under Ga-rich growth conditions. Possible sources of unwanted oxygen are discussed. © 2000 American Institute of Physics.


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