Influence of Ti on CoSi[sub 2] nucleation

Detavernier, C.; Van Meirhaeghe, R. L.; Van Meirhaeghe, R.L.; Cardon, F.; Maex, K.; Vandervorst, W.; Brijs, B.
November 2000
Applied Physics Letters;11/13/2000, Vol. 77 Issue 20
Academic Journal
Evidence is presented that impurities present in the precursor phase may influence the nucleation of a new phase. In case of the CoSi→CoSi[sub 2] transition, it is found that the presence of small amounts of Ti (originating from either a Ti capping layer or interlayer) causes an increase in the CoSi[sub 2] nucleation temperature. Moreover, for an increasing amount of Ti, we observed a transition from polycrystalline CoSi[sub 2] over preferential (220) orientation towards epitaxial (400) CoSi[sub 2]. The model that we propose entails a new point of view on the mechanism of Ti interlayer mediated epitaxy. © 2000 American Institute of Physics.


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