Mode transition between growth and decomposition of oxides on Si(001): Kinetically determined critical coverage for oxidation

Suemitsu, Maki; Enta, Yoshiharu; Takegawa, Youichi; Miyamoto, Nobuo
November 2000
Applied Physics Letters;11/13/2000, Vol. 77 Issue 20
Academic Journal
Effects of preoxidation on the reaction kinetics of oxygen molecules at Si(001) surface have been investigated by real-time ultraviolet photoelectron spectroscopy. A mode transition from decomposition to growth of surface oxides was found to exist at a certain initial oxide coverage, which is kinetically, not energetically, determined. By considering a change of balance between Si adatom and oxygen-monomer fluxes at the perimeter of oxide clusters, this mode transition is quantitatively described as a bifurcation of an autocatalytic-reaction rate equation. © 2000 American Institute of Physics.


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