Scanning tunneling spectroscopy study of silicon and platinum assemblies in an opal matrix

Díaz-Guerra, C.; Piqueras, J.; Golubev, V. G.; Kurdyukov, D. A.; Pevtsov, A. B.; Zamoryanskaya, M. V.
November 2000
Applied Physics Letters;11/13/2000, Vol. 77 Issue 20
Academic Journal
Scanning tunneling microscopy and scanning tunneling spectroscopy (STS) are used to investigate the local electronic behavior of Pt-Si nanostructures fabricated in an opal matrix formed by silica spheres of 250 nm diameter. Si and Pt are regularly distributed inside the opal pores and form nanoscale metal-semiconductor-metal junctions. Normalized differential conductance curves enable us to study the distribution of Pt and Si and to detect the presence of regions showing a surface band gap in the range 0.5-0.8 eV, possibly associated with the formation of silicides. STS appears as a suitable technique for the electrical characterization of opal-based nanostructures. © 2000 American Institute of Physics.


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