IrSiN films with superior oxygen-diffusion barrier effect for stacked ferroelectric capacitors

Matsushita, Shigeharu; Harada, Mitsuaki; Gueshi, Tatsuro; Matsushita, Yoshifumi
November 2000
Applied Physics Letters;11/13/2000, Vol. 77 Issue 20
Academic Journal
IrSiN films (including IrSi film) formed by the reactive co-sputtering of Ir and Si targets have been investigated with regard to their oxygen-diffusion barriers in an application to stacked ferroelectric capacitors. The film properties and barrier effect were examined with relation to the N[sub 2]/(Ar+N[sub 2]) deposition flow ratio. In IrSiN films formed with a N[sub 2]/(Ar+N[sub 2]) flow ratio of 0.06 or 0.12, a shallow oxygen penetration depth of less than 20 nm was attained even under annealing in O[sub 2] at 800 °C for 40 min, and no reaction was observed with polycrystalline silicon (poly-Si) films. These films also adhered well to both poly-Si and SiO[sub 2] films. Therefore, the barriers are likely to prove extremely useful for integrated ferroelectric capacitors. © 2000 American Institute of Physics.


Related Articles

  • Comparison of memory effect between YMnO[sub 3] and SrBi[sub 2]Ta[sub 2]O[sub 9] ferroelectric thin films deposited on Si substrates. Lee, Ho Nyung; Ho Hyung Lee; Kim, Yong Tae; Yong Tae Kim; Choh, Sung Ho; Sung Ho Choh // Applied Physics Letters;2/21/2000, Vol. 76 Issue 8 

    For the ferroelectric gate-type capacitors, we have fabricated Pt/YMnO[sub 3](YMO)/Si and Pt/SrBi[sub 2]Ta[sub 2]O[sub 9](SBT)/Si structures. We have used the highly c-axis oriented hexagonal YMO thin films (ε[sub r]approx. 19) and the polycrystalline SBT thin films (ε[sub r]approx. 150)...

  • In situ spectroscopic ellipsometry study of the growth of microcrystalline silicon. Kumar, Satyendra; Drevillon, B.; Godet, C. // Journal of Applied Physics;8/15/1986, Vol. 60 Issue 4, p1542 

    Presents information on a study that observed strong variations on the nature of microcrystalline silicon. Experimental procedures; Results and discussion.

  • Evaluation of the precipitate contribution to the infrared absorption in interstitial oxygen measurements in silicon. Sassella, A.; Borghesi, A.; Pivac, B.; Porrini, M. // Applied Physics Letters;12/17/2001, Vol. 79 Issue 25, p4106 

    The spurious contribution of oxide precipitates to the infrared absorption of interstitial oxygen in silicon is determined from spectra collected at 7 K for samples with different initial interstitial oxygen O[sub i] concentration subjected to a three-step thermal treatment. These data can be...

  • Characterization of epitaxial (Ca,Ba)F2 films on Si(111) substrates. Wittmer, M.; Smith, D. A.; Segmüller, Armin; Zogg, H.; Melchior, H. // Applied Physics Letters;10/6/1986, Vol. 49 Issue 14, p898 

    We have investigated epitaxial BaF2/CaF2 bilayers on Si(111) with ion channeling, grazing-incidence x-ray diffraction, and transmission electron microscopy. The BaF2 layer, which was grown on a thin intermediate CaF2 layer, showed a channeling minimum yield of 8% and a residual strain of 0.2%....

  • Epitaxial lateral overgrowth of GaN over AlO[sub x] surface formed on Si substrate.  // Applied Physics Letters;5/10/1999, Vol. 74 Issue 19, p2836 

    Studies the epitaxial lateral overgrowth of GaN over AlO[subx] surface formed on Si substrate. Boundary between the stripe template and AlO; Structural defects in GaN.

  • Young’s modulus of amorphous Terfenol-D thin films. Su, Q.; Morillo, J.; Wen, Y.; Wuttig, M. // Journal of Applied Physics;9/15/1996, Vol. 80 Issue 6, p3604 

    Provides information on a study which determined Young's modulus of amorphous Terfenol-D films utilizing the resonances of Terfenol-D/silicon composite cantilevers. Function of Terfenol-D thin film; Methodology of the study; Results and discussion.

  • Optical absorption of microcrystalline Si-Ni thin films. Schoenfeld, Olaf; Zhao, X.; Hempel, T.; Aoyagi, Y. // Journal of Applied Physics;8/1/1995, Vol. 78 Issue 3, p1987 

    Investigates the optical absorption behavior of microcrystalline silicon-nickel thin films with a homogeneous and heterogeneous microstructure. Model of grain boundary states in the nanometer sized grains; Overview of thermally activated conductivity measurements; Correlation of the share of...

  • An isotopic labeling study of the growth of thin oxide films on Si(100). Lu, H.C.; Gustafsson, T. // Applied Physics Letters;9/18/1995, Vol. 67 Issue 12, p1742 

    Presents a study on the growth of thin oxide films on silicon. Use of sequential exposures of oxygen isotopes to elucidate the growth mechanism of 2-5 nm oxide films; Spatial reactions taking place during thermal oxidation; Sources of isotope distributions in films; Traditional viewpoint of...

  • Doppler broadening positron annihilation spectroscopy: A technique for measuring open-volume... Petkov, Mihail P.; Weber, Marc H.; Lynn, Kelvin G.; Rodbell, Kenneth P.; Cohen, Stephan A. // Applied Physics Letters;4/12/1999, Vol. 74 Issue 15, p2146 

    Reports on the measurement of the concentration, spatial distribution and size of open-volume defects in low dielectric constant hydrogen- and methyl-silsequioxane thin films. Simple correlation between the number of open-volume defects and the dielectric constant obtained; Depth-resolving...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics