TITLE

IrSiN films with superior oxygen-diffusion barrier effect for stacked ferroelectric capacitors

AUTHOR(S)
Matsushita, Shigeharu; Harada, Mitsuaki; Gueshi, Tatsuro; Matsushita, Yoshifumi
PUB. DATE
November 2000
SOURCE
Applied Physics Letters;11/13/2000, Vol. 77 Issue 20
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
IrSiN films (including IrSi film) formed by the reactive co-sputtering of Ir and Si targets have been investigated with regard to their oxygen-diffusion barriers in an application to stacked ferroelectric capacitors. The film properties and barrier effect were examined with relation to the N[sub 2]/(Ar+N[sub 2]) deposition flow ratio. In IrSiN films formed with a N[sub 2]/(Ar+N[sub 2]) flow ratio of 0.06 or 0.12, a shallow oxygen penetration depth of less than 20 nm was attained even under annealing in O[sub 2] at 800 °C for 40 min, and no reaction was observed with polycrystalline silicon (poly-Si) films. These films also adhered well to both poly-Si and SiO[sub 2] films. Therefore, the barriers are likely to prove extremely useful for integrated ferroelectric capacitors. © 2000 American Institute of Physics.
ACCESSION #
4413874

 

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