TITLE

Deep levels and compensation in γ-irradiated CdZnTe

AUTHOR(S)
Cavallini, A.; Fraboni, B.; Dusi, W.; Zanarini, M.; Siffert, P.
PUB. DATE
November 2000
SOURCE
Applied Physics Letters;11/13/2000, Vol. 77 Issue 20
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The behavior of detector-grade Cd[sub 0.9]Zn[sub 0.1]Te in a radiation-hostile environment has been investigated by studying the effects on the material defective states induced by γ irradiation. The detector performance is strongly affected by the presence of charge-trapping centers which may also intervene in the material compensation properties. We have investigated by photoinduced current transient spectroscopy analyses the evolution with increasing irradiation dose of the deep levels both present in the as-grown material and induced by the ionizing radiation. A significant correlation between the material resistivity and some deep levels behavior has been observed. We have compared this trend to the results obtained from γ-irradiated CdTe:Cl to better understand the role deep traps play in the compensation process of II-VI materials. © 2000 American Institute of Physics.
ACCESSION #
4413870

 

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