Size control of carbon-induced Ge quantum dots

Beyer, A.; Mu¨ller, E.; Sigg, H.; Stutz, S.; Gru¨tzmacher, D.; Leifeld, O.; Ensslin, K.
November 2000
Applied Physics Letters;11/13/2000, Vol. 77 Issue 20
Academic Journal
Self-assembled C-induced Ge dots are islands which are not formed by the Stranski-Krastanov mode of growth. They are formed by a three-dimensional mode originating from the undulating strain fields of the C alloyed Si (100) surface. This opens additional possibilities to control the size and the shape of these dots by modifying the strain fields of the C-alloyed Si surface. Here, we show that the amount of C deposited prior to the growth of the Ge islands strongly effects the diameter and height of the dots. Increasing the C coverage to 0.3 monolayer leads to the formation of comparably compact islands. Consequently, the photoluminescence of the dots is shifted to lower energies compared to dots grown with lower C coverages. © 2000 American Institute of Physics.


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