Transport properties of modulation-doped InAs-inserted-channel In[sub 0.75]Al[sub 0.25]As/In[sub 0.75]Ga[sub 0.25]As structures grown on GaAs substrates

Richter, A.; Koch, M.; Matsuyama, T.; Heyn, Ch.; Merkt, U.
November 2000
Applied Physics Letters;11/13/2000, Vol. 77 Issue 20
Academic Journal
We report on gate voltage dependent electron transport in modulation-doped In[sub 0.75]Al[sub 0.25]As/In[sub 0.75]Ga[sub 0.25]As heterostructures with strained InAs-inserted-channels grown on GaAs substrates. At temperatures of T=4.2 K we achieve mobilities of up to μ=215 000 cm[sup 2](V s)[sup -1] and electron densities of n[sub S]=1.2x10[sup 12] cm[sup -2] for the highest measured gate voltage of V[sub g]=20 V. The electron effective mass m[sup *]=0.036 m[sub e] is determined by temperature dependent Shubnikov-de Haas measurements. The observation of an anisotropic mobility when the first excited subband becomes populated proves interface scattering to be the limiting mechanism for the electron mobility. © 2000 American Institute of Physics.


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