Gd[sub 2]O[sub 3]/GaN metal-oxide-semiconductor field-effect transistor

Johnson, J. W.; Johnson, J.W.; Luo, B.; Ren, F.; Gila, B. P.; Gila, B.P.; Krishnamoorthy, W.; Abernathy, C. R.; Abernathy, C.R.; Pearton, S. J.; Pearton, S.J.; Chyi, J. I.; Chiyi, J.I.; Nee, T. E.; Nee, T.E.; Lee, C. M.; Lee, C.M.; Chuo, C. C.; Chuo, C.C.
November 2000
Applied Physics Letters;11/13/2000, Vol. 77 Issue 20
Academic Journal
Gd[sub 2]O[sub 3] has been deposited epitaxially on GaN using elemental Gd and an electron cyclotron resonance oxygen plasma in a gas-source molecular beam epitaxy system. Cross-sectional transmission electron microscopy shows a high concentration of dislocations which arise from the large lattice mismatch between the two materials. GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) fabricated using a dielectric stack of single crystal Gd[sub 2]O[sub 3] and amorphous SiO[sub 2] show modulation at gate voltages up to 7 V and are operational at source drain voltages up to 80 V. This work represents demonstrations of single crystal growth of Gd[sub 2]O[sub 3] on GaN and of a GaN MOSFET using Gd[sub 2]O[sub 3] in the gate dielectric. © 2000 American Institute of Physics.


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