Low-dislocation-density GaN from a single growth on a textured substrate

Ashby, Carol I. H.; Ashby, Carol I.H.; Mitchell, Christine C.; Han, Jung; Jung Han; Missert, Nancy A.; Provencio, Paula P.; Follstaedt, David M.; Peake, Gregory M.; Griego, Leonardo
November 2000
Applied Physics Letters;11/13/2000, Vol. 77 Issue 20
Academic Journal
The density of threading dislocations (TD) in GaN grown directly on flat sapphire substrates is typically greater than 10[sup 9]/cm[sup 2]. The density of dislocations can be decreased by orders of magnitude using cantilever epitaxy, which employs pre-patterned sapphire substrates to provide reduced-dimension mesa regions for nucleation and etched trenches between them for suspended lateral growth of GaN or AlGaN. The substrate is pre-patterned with narrow lines and etched to a depth that permits coalescence of laterally growing III-N nucleated on the mesa surfaces before vertical growth fills the etched trench. Low-dislocation densities typical of epitaxial lateral overgrowth are obtained in the cantilever regions and the TD density is also reduced up to 1 μm from the edge of the support regions. © 2000 American Institute of Physics.


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