InGaN/GaN quantum well interconnected microdisk light emitting diodes

Jin, S. X.; Jin, S.X.; Li, J.; Lin, J. Y.; Lin, J.Y.; Jiang, H. X.; Jiang, H.X.
November 2000
Applied Physics Letters;11/13/2000, Vol. 77 Issue 20
Academic Journal
Interconnected microdisk light-emitting diodes (μ-LEDs) have been fabricated from InGaN/GaN single quantum wells grown by low pressure metal organic chemical vapor deposition. These interconnected μ-disk LEDs fit into the same device area taken up by a conventional broad-area LED. The performance characteristic of these interconnected μ-disk LEDs, including I-V and L-I characteristics as well as electroluminescence spectra have been measured and compared with those of the conventional broad-area LEDs. For interconnected μ-disk LEDs, while V[sub F], the forward biased voltage at 20 mA, was slightly increased, the emission efficiency was increased by as much as 60% over the conventional LEDs for a fixed device area. The results thus suggested that replacing a conventional broad-area LED with an interconnected μ-disk LED, the external quantum efficiency can be significantly enhanced. Finally, the fabrication processes of the interconnected μ-disk LEDs are almost the same as those of the conventional broad-area LEDs. It is thus expected the total yield of these interconnected μ-disk LEDs to be the same as the conventional broad-area LEDs. The present method of utilizing interconnected μ-disk LEDs for improving the brightness of LEDs is applicable to other semiconductor LEDs as well as polymer and organic LEDs. © 2000 American Institute of Physics.


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