TITLE

Electrical and reliability characteristics of ZrO[sub 2] deposited directly on Si for gate dielectric application

AUTHOR(S)
Wen-Jie Qi; Qi, Wen-Jie; Nieh, Renee; Byoung Hun Lee; Lee, Byoung Hun; Laegu Kang; Kang, Laegu; Yongjoo Jeon; Jeon, Yongjoo; Lee, Jack C.
PUB. DATE
November 2000
SOURCE
Applied Physics Letters;11/13/2000, Vol. 77 Issue 20
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
ZrO[sub 2] thin film has been studied as an alternative gate dielectric. It was deposited directly on a Si substrate by reactive sputtering. An equivalent oxide thickness of less than 11 Å with a leakage current of 1.9x10[sup -3] A/cm[sup 2] at -1.5 V relative to the flat band voltage has been obtained. Well-behaved capacitance-voltage characteristics with an interface state density of less than 10[sup 11] cm[sup -2] eV[sup -1] and no significant frequency dispersion have been achieved. Excellent reliability properties (e.g., low charge trapping rate, good time-dependent dielectric breakdown, low stress-induced leakage current, and high dielectric breakdown) have also been obtained. © 2000 American Institute of Physics.
ACCESSION #
4413851

 

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