Hall mobility and free electron density at the SiC/SiO[sub 2] interface in 4H-SiC

Saks, N. S.; Saks, N.S.; Agarwal, A. K.; Agrawal, A.K.
November 2000
Applied Physics Letters;11/13/2000, Vol. 77 Issue 20
Academic Journal
The electron mobility and free electron density have been measured in 4H- and 6H-SiC metal-oxide-semiconductor inversion layers using the Hall effect. The 4H-SiC inversion layers are found to have very poor conductance which is caused by severe trapping of electrons at the Si/SiO[sub 2] interface. The trapping causes reduced conductance through a reduction in the number of free electrons in the inversion layer, and also because of a drop in the mobility due to increased Coulombic scattering. © 2000 American Institute of Physics.


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