Direct observation of lasing mode in a microdisk laser by a near-field-probing technique

Baba, Toshihiko; Yamada, Hiroshi; Sakai, Atsushi
September 2000
Applied Physics Letters;9/11/2000, Vol. 77 Issue 11
Academic Journal
Evanescent field profiles of whispering gallery (WG) modes in a 1.6-μm-GaInAsP microdisk injection laser were investigated by scanning a nanoprobe near the periphery of a lasing microdisk. The increase in threshold current due to the light scattering by the probe and the corresponding decrease in laser light were observed experimentally. Two-dimensional images of the evanescent field, which agreed well with theoretical expectations, were obtained by the use of a Pt-Ir probe. The images indicate that the WG mode is strongly locked by the fourfold symmetry in the microdisk with center post claddings. This characteristic is favorable for the microdisk laser itself to be used as an active near-field probe. A lower contrast image obtained by the use of a tapered silica fiber probe suggests that the microdisk probe can be sensitive to both surface profiles and optical properties of the object. © 2000 American Institute of Physics.


Related Articles

  • Nitrogen-doped gallium phosphide nanobelts. Seo, Hee Won; Bae, Seung Yong; Park, Jeunghee; Yang, Hyunik; Kang, Myungil; Kim, Sangsig; Park, Ju Chul; Lee, Soun Young // Applied Physics Letters;5/26/2003, Vol. 82 Issue 21, p3752 

    Nitrogen-doped gallium phosphide nanobelts were directly synthesized via a sublimation of ball-milled powders under ammonia flow. The average width of the nanobelts is 300 nm and the thickness is about 1/10 of the width. They consist of single-crystalline zinc blende structure crystal with the...

  • Influence of heating of the active region in InGaAsP/InP injection lasers on their spectral characteristics. Karachinskii, L. Ya.; Georgievskii, A. M.; Pikhtin, N. A.; Zaitsev, S. V.; Tarasov, I. S.; Kop�ev, P. S. // Technical Physics Letters;Apr99, Vol. 25 Issue 4, p334 

    Spectral and spatial characteristics of the output of InGaAsP/InP separate-confinement double heterostructure laser are investigated. The measurements are performed in quasicontinuous and continuous pumping regimes at room temperature. These lasers are shown to be spatially single-mode over the...

  • Spatial ordering in InP/InGaP nanostructures. Bortoleto, J. R. R.; Gutiérrez, H. R.; Cotta, M. A.; Bettini, J.; Cardoso, L. P.; de Carvalho, M. M. G. // Applied Physics Letters;5/19/2003, Vol. 82 Issue 20, p3523 

    We report the observation of a spatially-ordered bidimensional array of self-assembled InP quantum dots grown on slightly In-rich InGaP layers. The alignment of InP dots is observed along [100] and [010] directions. This effect is enhanced when 2° off vicinal substrates are used; it is also...

  • Ion-induced formation of regular nanostructures on amorphous GaSb surfaces. Facsko, S.; Bobek, T.; Kurz, H.; Dekorsy, T.; Kyrsta, S.; Cremer, R. // Applied Physics Letters;1/7/2002, Vol. 80 Issue 1, p130 

    Crystalline and amorphous GaSb surfaces are compared concerning their response to sputter erosion with low energy Ar[sup +] ions under normal incidence. We show that the formation of regular nanostructures on GaSb is basically independent of whether the initial material is crystalline or...

  • Indium-rich island structures formed by in-situ nanomasking technology. Zavarin, E. E.; Sakharov, A. V.; Lundin, W. V.; Davydov, D. V.; Sizov, V. S.; Brunkov, P. N.; Goncharov, V. V.; Tsatsulnikov, A. F. // Technical Physics Letters;Nov2009, Vol. 35 Issue 11, p1016 

    A new method of forming InGaN/GaN nanostructures emitting in the long-wavelength green spectral range is proposed and implemented. The method is based on growing a thin InGaN layer over nanosized pits formed in situ by etching a locally AlN-masked GaN layer in a hydrogen-containing atmosphere.

  • Current-injection lasing in T-shaped GaAs/AlGaAs quantum-wire lasers. Shu-man Liu; Yoshita, Masahiro; Okano, Makoto; Akiyama, Hidefumi; Pfeiffer, Loren N.; West, Ken W. // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p861 

    Current-injection T-shaped GaAs/AlGaAs quantum wires lasers have been fabricated by a cleaved-edge overgrowth method with molecular beam epitaxy. Continuous single-mode operation at photon energy of ∼1.5 eV has been demonstrated between 30 K up to 70 K from laser diodes with...

  • GaAsSbP QUASITERNARY MATERIAL SYSTEM: NANOSTRUCTURES GROWTH FEATURES AND IMMISCIBILITY ANALYSIS. Gambaryan, K. M.; Simonyan, A. K.; Aroutiounian, V. M. // Armenian Journal of Physics;2012, Vol. 5 Issue 3, p156 

    The continuum elasticity model is applied to quantitatively investigate the growth features and nucleation mechanism of quantum dots (QDs), nanopits, and coopetative QDs-nanopits structures in GaAsSbP quasiternary systems. We determine the critical lattice mismatch of GaAs/GaAsSbP system equal...

  • Electrospun Gallium Nitride Nanofibers (abstract). Meléndez, Anamaris; Morales, Kristle; Ramos, Idalia; Campo, Eva; Santiago, Jorge J. // AIP Conference Proceedings;4/19/2009, Vol. 1119 Issue 1, p229 

    The high thermal conductivity and wide bandgap of gallium nitride (GaN) are desirable characteristics in optoelectronics and sensing applications. In comparison to thin films and powders, in the nanofiber morphology the sensitivity of GaN is expected to increase as the exposed area (proportional...

  • Spin-splitting in an AlxGa1-xN/GaN nanowire for a quantum-ring interferometer. Ikai Lo; Wen-Yuan Pang; Yen-Liang Chen; Yu-Chi Hsu; Jih-Chen Chiang; Wei-Hsin Lin; Wan-Ting Chiu; Jenn-Kai Tsai; Chun-Nan Chen // Applied Physics Letters;9/29/2008, Vol. 93 Issue 13, p132114 

    An Al0.18Ga0.82N/GaN heterostructure was used to fabricate a ballistic nanowire with a wire width of 200 nm by focused ion beam. We observed the beating Shubnikov–de Haas oscillations in the nanowire with a spin-splitting energy of (2.4±0.3) meV. Based on the results, we proposed a...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics