TITLE

Reliability of photopumped Al[sub x]Ga[sub 1-x]As-GaAs quantum well heterostructure lasers with top and bottom distributed native-oxide reflectors

AUTHOR(S)
Kellogg, D. A.; Kellogg, D.A.; Holonyak, N.; Holonyak Jr., N.; Dupuis, R. D.; Duplis, R.D.
PUB. DATE
September 2000
SOURCE
Applied Physics Letters;9/11/2000, Vol. 77 Issue 11
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Data on an Al[sub x]Ga[sub 1-x]As-GaAs quantum well heterostructure (QWH) designed to be oxidized and used as a photopumped vertical cavity surface emitting laser (VCSEL) are presented showing the full range in reliability (5+ years) from atmospheric decay of the as-grown crystal by hydrolyzation to protection of the QWH VCSEL by means of the Al-based native oxide ("wet" oxidation, 425 °C). In contrast to fully oxidized crystals in a VCSEL configuration that remain stable (AlAs layers converted to oxide), broad area p-n diodes made from the as-grown crystal, with buried AlAs layers exposed at edges, hydrolyze. © 2000 American Institute of Physics.
ACCESSION #
4413726

 

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