TITLE

InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy with mass transport

AUTHOR(S)
Pozina, G.; Bergman, J. P.; Bergman, J.P.; Monemar, B.; Iwaya, M.; Nitta, S.; Amano, H.; Akasaki, I.
PUB. DATE
September 2000
SOURCE
Applied Physics Letters;9/11/2000, Vol. 77 Issue 11
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on studies of In[sub 0.12]Ga[sub 0.88]N/GaN heterostructures with three 35-Å-thick quantum wells (QWs) grown on sapphire substrates by metalorganic vapor phase epitaxy with employment of mass transport. The structure is demonstrated to show good structural and optical properties. The threading dislocation density is less than 10[sup 7] cm[sup -2] for the mass-transport regions. The photoluminescence (PL) spectrum is dominated by the rather narrow near-band gap emission at 2.97 eV with a linewidth of 40 meV. This emission has a typical PL decay time about 5 ns at 2 K within the PL contour. With increasing excitation intensity, an additional transition with longer decay time (about 200 ns) is enhanced at energy about 2.85 eV. The position of this line depends strongly on the excitation power. We explain the data in terms of a model, where the PL is a result of contribution from at least two nonequivalent QWs, which could be realized due to a potential gradient across the layers. © 2000 American Institute of Physics.
ACCESSION #
4413716

 

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