Nitrogen dependence of the GaAsN interband critical points E[sub 1] and E[sub 1]+Δ[sub 1] determined by spectroscopic ellipsometry

Leibiger, G.; Gottschalch, V.; Rheinla¨nder, B.; Sik, J.; Schubert, M.
September 2000
Applied Physics Letters;9/11/2000, Vol. 77 Issue 11
Academic Journal
The effects of the nitrogen concentrations on the E[sub 1] and E[sub 1]+Δ[sub 1] transitions of tensile-strained GaAs[sub 1-y]N[sub y] (0.1%≤y≤3.7%) grown pseudomorphically to GaAs by metalorganic vapor-phase epitaxy are studied by spectroscopic ellipsometry. Adachi's critical-point composite model is employed for ellipsometry data analysis. Contrary to the well-known redshift of the band-gap energy E[sub 0], we observe linearly blueshifted E[sub 1] and E[sub 1]+Δ[sub 1] transition energies with increasing nitrogen composition y. For nitrogen compositions of 0≤y≤1.65%, the observed blueshift of the E[sub 1] energy is well explained by the sum of the effects of biaxial (001) strain and alloying. © 2000 American Institute of Physics.


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