Si/SiGe electron resonant tunneling diodes

Paul, D. J.; See, P.; Zozoulenko, I. V.; Berggren, K.-F.; Kabius, B.; Holla¨nder, B.; Mantl, S.
September 2000
Applied Physics Letters;9/11/2000, Vol. 77 Issue 11
Academic Journal
Resonant tunneling diodes have been fabricated using strained-Si wells and strained Si[sub 0.4]Ge[sub 0.6] barriers on a relaxed Si[sub 0.8]Ge[sub 0.2] n-type substrate, which demonstrate negative differential resistance at 298 K. Peak current densities of 5 kA/cm[sup 2] with peak-to-valley current ratios of 1.1 have been achieved. Theoretical modeling of the structure demonstrates that the major current peak results from the tunneling of light-mass electrons from the relaxed substrate and not from the heavy-mass electrons in the emitter accumulation layer. © 2000 American Institute of Physics.


Related Articles

  • Direct tunneling diode structure with a multilayer charge injection barrier. Dons, E. M.; Skowronski, C. S.; Farmer, K. R. // Applied Physics Letters;12/21/1998, Vol. 73 Issue 25 

    We report the fabrication and testing of a silicon-based tunnel diode structure that incorporates a multilayer tunneling dielectric. The barrier consists of two thermally grown silicon oxide layers of direct tunneling thickness, ∼3.5 nm each, separated by an ultrathin nanocrystalline...

  • Vertical integration of a spin dependent tunnel junction with an amorphous Si diode. Sousa, R. C.; Freitas, P. P. // Applied Physics Letters;6/21/1999, Vol. 74 Issue 25, p3893 

    Demonstrates integration of magnetic tunneling junctions with hydronated amorphous silicon (a-Si:H) diodes. Measurement of the current change when the junction free layer is switched in an external magnetic field; Measurement of the individual tunneling magnetoresistance signal; Bit selectivity...

  • Tunneling Recombination in Silicon Avalanche Diodes. Bulyarski&icaron;, S.V.; Ionychev, V.K.; Kuz'min, V.V. // Semiconductors;Jan2003, Vol. 37 Issue 1, p115 

    Distribution of the tunneling-recombination current over the space-charge region in a p-n junction was simulated mathematically. It is shown that the recombination rate saturates if the probability of tunneling is low. An expression for current-voltage characteristics of the p-n junction in the...

  • Resonant tunneling through metal (Ag–Ti)/insulator (MgO) triple barrier structures. Kado, T. // Applied Physics Letters;5/6/2002, Vol. 80 Issue 18, p3382 

    Resonant tunneling through metal (Ag-Ti)/insulator (MgO) triple barrier structures has been demonstrated. The multilayers with the triple barrier structures were epitaxially grown on MgO (001) substrates under 473 K by the electron beam evaporation method. For the measurement of current-voltage...

  • Excess current investigations of silicon p[sup +]–i–n[sup +] diodes. Reitemann, G.; Kasper, E. // Applied Physics Letters;2/18/2002, Vol. 80 Issue 7, p1294 

    Si p[SUP +]-i-n[SUP +] junctions, as used in modern devices, are investigated for excess current contributions in their forward characteristics. The excess current is caused by tunneling through band-gap states. The current characteristics of epitaxially grown junctions are studied...

  • Full-band simulation of indirect phonon assisted tunneling in a silicon tunnel diode with delta-doped contacts. Rivas, Cristian; Lake, Roger; Klimeck, Gerhard; Frensley, William R.; Fischetti, Massimo V.; Thompson, Phillip E.; Rommel, Sean L.; Berger, Paul R. // Applied Physics Letters;2/5/2001, Vol. 78 Issue 6, p814 

    Full-band simulations of indirect, phonon assisted, interband tunneling are used to calculate the current-voltage response of a low-temperature molecular-beam-epitaxy-grown silicon tunnel diode with delta-doped contacts. Electron confinement in the contacts results in weak structure in the...

  • Rigorous carrier dynamic model of electroluminescent metal-oxide-semiconductor silicon tunneling diodes. Liang, Eih-Zhe; Su, Ting-Wei; Lin, Ching-Fuh // Journal of Applied Physics;9/1/2006, Vol. 100 Issue 5, p054509 

    The carrier dynamics of electroluminescent metal-oxide-semiconductor silicon tunneling diodes is rigorously modeled in this study. Various tunneling and recombination current densities are formulated without using the Maxwell-Boltzmann approximation for the carrier concentrations. This model...

  • Toward marrying electronics, optics. Teresko, John // Industry Week/IW;01/20/97, Vol. 246 Issue 2, p67 

    Reports on the development of a silicon diode with capabilities to process light and electricity by researchers from the University of Rochester and the Rochester Institute of Technology. Integration of a porous silicon light emitting diode into conventional microelectronic circuitry.

  • John Allen's diode triangles. Paul, Kermit // Model Railroader;Oct97, Vol. 64 Issue 10, p93 

    Focuses on directional lighting circuits while highlighting John Allen's diode triangles for additional directional lights to steam locomotives which was designed to simplify connections between engines and tenders. Why the connection was important to Allen; Information on Allen's diode...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics