TITLE

Si/SiGe electron resonant tunneling diodes

AUTHOR(S)
Paul, D. J.; See, P.; Zozoulenko, I. V.; Berggren, K.-F.; Kabius, B.; Holla¨nder, B.; Mantl, S.
PUB. DATE
September 2000
SOURCE
Applied Physics Letters;9/11/2000, Vol. 77 Issue 11
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Resonant tunneling diodes have been fabricated using strained-Si wells and strained Si[sub 0.4]Ge[sub 0.6] barriers on a relaxed Si[sub 0.8]Ge[sub 0.2] n-type substrate, which demonstrate negative differential resistance at 298 K. Peak current densities of 5 kA/cm[sup 2] with peak-to-valley current ratios of 1.1 have been achieved. Theoretical modeling of the structure demonstrates that the major current peak results from the tunneling of light-mass electrons from the relaxed substrate and not from the heavy-mass electrons in the emitter accumulation layer. © 2000 American Institute of Physics.
ACCESSION #
4413711

 

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