TITLE

SiGe heterojunction vertical p-type metal-oxide-semiconductor field-effect transistors with Si cap

AUTHOR(S)
Chen, Xiangdong; Xiangdong Chen; Ouyang, Qiqing; Qiqing Ouyang; Onsongo, David M.; Onsongco, David M.; Jayanarayanan, Sankaran Kartik; Tasch, Al; Banerjee, Sanjay
PUB. DATE
September 2000
SOURCE
Applied Physics Letters;9/11/2000, Vol. 77 Issue 11
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
SiGe source heterojunction p-type metal-oxide-semiconductor field-effect transistors (p-MOSFETs) have been used before to suppress the short channel effect for sub-100 nm devices. While the leakage is reduced, the drive current is also reduced due to the heterojunction. In this letter, we discuss a SiGe source heterojunction vertical p-MOSFET with a few nanometers thick Si cap. With this device structure, the absence of the heterojunction-induced potential barrier right below the oxide interface improves the drive current substantially while the drain induced barrier lowering (DIBL) effect and floating body effect are still suppressed. The electrical characterization of the device shows it exhibits higher drive current and less DIBL compared with a Si control device. © 2000 American Institute of Physics.
ACCESSION #
4413710

 

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