Control of the residual doping of InAs/(GaIn)Sb infrared superlattices

Bu¨rkle, L.; Fuchs, F.; Schmitz, J.; Pletschen, W.
September 2000
Applied Physics Letters;9/11/2000, Vol. 77 Issue 11
Academic Journal
Magnetotransport and photoluminescence (PL) measurements on InAs/(GaIn)Sb superlattices (SLs) grown by molecular-beam epitaxy on GaSb substrates at different substrate temperatures are reported. With increasing growth temperature, a transition of the SLs from residual n type to residual p-type doping was observed. For n-type samples, a decrease in the electron concentration leads to a strong increase in the PL intensity. In contrast, the PL intensity of p-type samples is only weakly dependent on the hole concentration. This correlation can be used to control the residual doping of the SLs. © 2000 American Institute of Physics.


Related Articles

  • Very long wavelength infrared type-II detectors operating at 80 K. Mohseni, H.; Tahraoui, A.; Wojkowski, J.; Razeghi, M.; Brown, G. J.; Brown, G.J.; Mitchel, W. C.; Mitchel, W.C.; Park, Y. S.; Park, Y.S. // Applied Physics Letters;9/11/2000, Vol. 77 Issue 11 

    We report a demonstration of very long wavelength infrared detectors based on InAs/GaSb superlattices operating at T=80 K. Detector structures with excellent material quality were grown on an optimized GaSb buffer layer on GaAs semi-insulating substrates. Photoconductive devices with 50% cutoff...

  • nBn structure based on InAs/GaSb type-II strained layer superlattices. Rodriguez, J. B.; Plis, E.; Bishop, G.; Sharma, Y. D.; Kim, H.; Dawson, L. R.; Krishna, S. // Applied Physics Letters;7/23/2007, Vol. 91 Issue 4, p043514 

    The authors report on a type-II InAs/GaSb strained layer superlattice (SLS) photodetector using an nBn design that can be used to eliminate both Shockley-Read-Hall generation currents and surface recombination currents, leading to a higher operating temperature. We present such a SLS based...

  • Ultralow noise midwave infrared InAs–GaSb strain layer superlattice avalanche photodiode. Mallick, Shubhrangshu; Banerjee, Koushik; Ghosh, Siddhartha; Plis, Elena; Rodriguez, Jean Baptiste; Krishna, Sanjay; Grein, Christoph // Applied Physics Letters;12/10/2007, Vol. 91 Issue 24, p241111 

    Eye-safe midwavelength infrared InAs–GaSb strain layer superlattice p+-n--n homojunction avalanche photodiodes (APDs) grown by solid source molecular beam epitaxy were fabricated and characterized. Maximum multiplication gain of 1800 was measured at -20 V at 77 K. Excess noise factors...

  • Stark Magnetophonon Resonance observation in InAs/GaSb superlattices. Deacon, R. S.; Nicholas, R. J.; Shields, P. A. // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p587 

    We present a magnetotransport study of Stark quantised InAs/GaSb superlattices at low temperatures. Analysis of magnetotransport resonances identifies a series of Stark magnetophonon resonance (SMPR) features in which a triple resonance of Bloch energy, cyclotron energy and longitudinal optic...

  • Spontaneous emission from InAs/GaSb quantum wells grown by molecular beam epitaxy. Bertru, N.; Baranov, A. N. // Journal of Applied Physics;2/1/1999, Vol. 85 Issue 3, p1989 

    Presents information on a study which investigated the spontaneous emission from InAs/GaSb quantum wells grown by molecular beam epitaxy. Formation of triangular quantum wells for holes in the GaSb barriers; Temperature dependence of photoluminescence.

  • Influence of the optical control in the lateral transport of carriers in InGaAs/GaAs one-side modulation-doped quantum wells. da Cunha, J. F. R.; da Silva, S. W.; Morais, P. C.; Lamas, T. E.; Quivy, A. A. // Journal of Applied Physics;8/15/2007, Vol. 102 Issue 4, p043704 

    The effects of optically exciting n-type and p-type one-side modulation-doped InGaAs/GaAs quantum well structures were investigated by scanning the photoluminescence intensity profile on the sample’s surface. An undoped quantum well was used as reference. Photoluminescence and carrier...

  • Room temperature photoluminescence in the 1 μm region from InAs monolayer structures. Dosanjh, S. S.; Hart, L.; Nayak, R.; Joyce, B. A. // Journal of Applied Physics;6/15/1994, Vol. 75 Issue 12, p8066 

    Presents a study that investigated photoluminescence of (indium arsenide) (InAs)[sub1](gallium arsenide)(GaAs)[sub2] superlattice structures. Methodology; Determination of the thickness of the InAs and GaAs layers; Analysis of the optical properties of the superlattice.

  • Liquidus measurements of Ga-Sb and In-As in the 375–650 °C range. DeWinter, J. C.; Pollack, M. A. // Journal of Applied Physics;5/15/1986, Vol. 59 Issue 10, p3593 

    Focuses on the measurements of gallium-antimony and indium-arsenic liquidus compositions in the 375-650 degree celsius. Comparison between the measurements of liquidus composition and temperature; Discussion regarding the source dissolution method involving equilibration of a known quantity of...

  • Characterization of ion-implantation doping of strained-layer superlattices. II. Optical and electrical properties. Myers, D. R.; Biefeld, R. M.; Gourley, P. L.; Wiczer, J. J.; Zipperian, T. E.; Fritz, I. J.; Barnes, C. E.; Osbourn, G. C. // Journal of Applied Physics;11/15/1986, Vol. 60 Issue 10, p3641 

    Examines the quality of implantation-doped gallium (arsenic phosphide)/gallium phosphide strained-layer superlattices (SLS) as would be appropriate for the development of active electronic devices. Characterization of the optical and transport properties of the superlattices; Results of the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics