TITLE

Control of the residual doping of InAs/(GaIn)Sb infrared superlattices

AUTHOR(S)
Bu¨rkle, L.; Fuchs, F.; Schmitz, J.; Pletschen, W.
PUB. DATE
September 2000
SOURCE
Applied Physics Letters;9/11/2000, Vol. 77 Issue 11
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Magnetotransport and photoluminescence (PL) measurements on InAs/(GaIn)Sb superlattices (SLs) grown by molecular-beam epitaxy on GaSb substrates at different substrate temperatures are reported. With increasing growth temperature, a transition of the SLs from residual n type to residual p-type doping was observed. For n-type samples, a decrease in the electron concentration leads to a strong increase in the PL intensity. In contrast, the PL intensity of p-type samples is only weakly dependent on the hole concentration. This correlation can be used to control the residual doping of the SLs. © 2000 American Institute of Physics.
ACCESSION #
4413709

 

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