Band discontinuities at epitaxial SrTiO[sub 3]/Si(001) heterojunctions

Chambers, S. A.; Chambers, S.A.; Liang, Y.; Yu, Z.; Droopad, R.; Ramdani, J.; Eisenbeiser, K.
September 2000
Applied Physics Letters;9/11/2000, Vol. 77 Issue 11
Academic Journal
We have used photoemission methods to directly measure the valence and conduction band offsets at SrTiO[sub 3]/Si(001) interfaces, as prepared by molecular-beam epitaxy. Within experimental error, the measured values are the same for growth on n- and p-Si, with the entire band discontinuity occurring at the valence band edge. In addition, band bending is much larger at the p-Si heterojunction than at the n-type heterojunction. Previously published threshold voltage behavior for these interfaces can now be understood in light of the present results. © 2000 American Institute of Physics.


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