Dielectric properties in heteroepitaxial Ba[sub 0.6]Sr[sub 0.4]TiO[sub 3] thin films: Effect of internal stresses and dislocation-type defects

Canedy, C. L.; Canedy, C.L.; Li, Hao; Hao Li; Alpay, S. P.; Alpay, S.P.; Salamanca-Riba, L.; Roytburd, A. L.; Roytburd, A.L.; Ramesh, R.
September 2000
Applied Physics Letters;9/11/2000, Vol. 77 Issue 11
Academic Journal
A series of heteroepitaxial Ba[sub 0.6]Sr[sub 0.4]TiO[sub 3] were grown on 0.29(LaAlO[sub 3]):0.35(Sr[sub 2]TaAlO[sub 6]) substrates using pulsed-laser deposition. X-ray characterization revealed compressive in-plane stresses in the thinnest films, which were relaxed in a continuous fashion with increasing thickness. A theoretical treatment of the misfit strain was in good agreement with the measured out-of-plane lattice parameter. The low-frequency dielectric constant was measured to be significantly less than the bulk value and found to decrease rapidly for films less than 100 nm. A thermodynamic model was developed to understand the reduction in dielectric constant. By observing the microstructure using plan-view and cross-section transmission electron microscopy, we identified local strain associated with a threading dislocation density on the order of 10[sup 11] cm[sup -2] as a possible mechanism for dielectric degradation in these films. © 2000 American Institute of Physics.


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