TITLE

Ultrathin zirconium silicate film with good thermal stability for alternative gate dielectric application

AUTHOR(S)
Qi, Wen-Jie; Wen-Jie Qi; Nieh, Renee; Dharmarajan, Easwar; Lee, Byoung Hun; Byoung Hun Lee; Jeon, Yongjoo; Yongjoo Jeon; Kang, Laegu; Laegu Kang; Onishi, Katsunori; Lee, Jack C.
PUB. DATE
September 2000
SOURCE
Applied Physics Letters;9/11/2000, Vol. 77 Issue 11
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Zirconium silicate (ZrSi[sub x]O[sub y]) films have been sputtered by comagnetron-reactive sputtering. The composition of ZrSi[sub x]O[sub y] has been controlled by adjusting the sputtering powers of Si and Zr targets to achieve various effective dielectric constants. The sputtered silicate layers showed low equivalent oxide thickness of 14.5 Å with a low leakage of 3.3x10[sup -3] A/cm[sup 2] at -1.5 V relative to flat band voltage. The silicate films also exhibited good high-temperature stability and smooth interfacial properties on silicon substrate. © 2000 American Institute of Physics.
ACCESSION #
4413694

 

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