TITLE

High-speed GaAs-based resonant-cavity-enhanced 1.3 μm photodetector

AUTHOR(S)
Kimukin, Ibrahim; Ozbay, Ekmel; Biyikli, Necmi; Kartaloglu, Tolga; Aytu¨r, Orhan; Unlu, Selim; Tuttle, Gary
PUB. DATE
December 2000
SOURCE
Applied Physics Letters;12/11/2000, Vol. 77 Issue 24
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report GaAs-based high-speed, resonant-cavity-enhanced, Schottky barrier internal photoemission photodiodes operating at 1.3 μm. The devices were fabricated by using a microwave-compatible fabrication process. Resonance of the cavity was tuned to 1.3 μm and a nine-fold enhancement was achieved in quantum efficiency. The photodiode had an experimental setup limited temporal response of 16 ps, corresponding to a 3 dB bandwidth of 20 GHz. © 2000 American Institute of Physics.
ACCESSION #
4413681

 

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