TITLE

Nanoscale selective-area epitaxial growth of Si using an ultrathin SiO[sub 2]/Si[sub 3]Ni[sub 4] mask patterned by an atomic force microscope

AUTHOR(S)
Yasuda, T.; Yamasaki, S.; Gwo, S.
PUB. DATE
December 2000
SOURCE
Applied Physics Letters;12/11/2000, Vol. 77 Issue 24
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report selective epitaxial growth of Si using an ultrathin bilayer mask. The key feature of this process is direct writing of nanoscale patterns by means of local anodic oxidation of a Si[sub 3]N[sub 4] layer using an atomic force microscope operated in air. Windows for selective growth are defined by wet etching of the locally oxidized regions. High growth selectivity upon chemical vapor deposition of Si is accomplished by employing the bilayer mask structure which is formed by oxidizing the Si[sub 3]N[sub 4] surface and then selectively desorbing SiO[sub 2] in the windows. High-quality homoepitaxial growth is verified by transmission electron microscopy. We also report a simple plasma-treatment technique which solves the problem of retarded SiO[sub 2] desorption in the nanoscale windows. © 2000 American Institute of Physics.
ACCESSION #
4413672

 

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