Impurity gettering by vacancy-type defects in high-energy ion-implanted silicon at R[sub p ]/2

Krause-Rehberg, R.; Bo¨rner, F.; Redmann, F.
December 2000
Applied Physics Letters;12/11/2000, Vol. 77 Issue 24
Academic Journal
Vacancy-type defects were studied after high-energy self-implantation of Si and subsequent rapid thermal annealing by means of a depth-resolution enhanced positron beam technique. Two different types of open-volume defects were found at a depth of R[sub p]/2 and R[sub p], respectively. The defect type at R[sub p]/2 is an agglomeration of point defects containing vacancies. This defect getters diffusing copper atoms. The vacancy-type defect observed in a depth of R[sub p] could be connected to the interstitial loops formed there. The positron annihilation parameters suggest that this detected defect is not decorated by diffusing copper atoms. © 2000 American Institute of Physics.


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