Growth of stress-released GaAs on GaAs/Si structure by metalorganic chemical vapor deposition

Soga, T.; Jimbo, T.; Arokiaraj, J.; Umeno, M.
December 2000
Applied Physics Letters;12/11/2000, Vol. 77 Issue 24
Academic Journal
A stress-released GaAs layer was grown on GaAs bonded to Si substrate with the combination of epitaxial lift-off technique and regrowth by metalorganic chemical vapor deposition. The GaAs thin film was bonded to Si substrate using SeS[sub 2] and another GaAs layer was regrown. The photoluminescence peak wavelength and the slope of the time resolved photoluminescence decay of GaAs/Si are almost the same as those of GaAs grown on GaAs substrate. © 2000 American Institute of Physics.


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