TITLE

Growth of stress-released GaAs on GaAs/Si structure by metalorganic chemical vapor deposition

AUTHOR(S)
Soga, T.; Jimbo, T.; Arokiaraj, J.; Umeno, M.
PUB. DATE
December 2000
SOURCE
Applied Physics Letters;12/11/2000, Vol. 77 Issue 24
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A stress-released GaAs layer was grown on GaAs bonded to Si substrate with the combination of epitaxial lift-off technique and regrowth by metalorganic chemical vapor deposition. The GaAs thin film was bonded to Si substrate using SeS[sub 2] and another GaAs layer was regrown. The photoluminescence peak wavelength and the slope of the time resolved photoluminescence decay of GaAs/Si are almost the same as those of GaAs grown on GaAs substrate. © 2000 American Institute of Physics.
ACCESSION #
4413662

 

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