Vertical correlation of SiGe islands in SiGe/Si superlattices: X-ray diffraction versus transmission electron microscopy

Stangl, J.; Roch, T.; Bauer, G.; Bauer, G; Kegel, I.; Metzger, T. H.; Metzger, T.H.; Schmidt, O. G.; Schmidt, O.G.; Eberl, K.; Ernst, F.; Kienzle, O.
December 2000
Applied Physics Letters;12/11/2000, Vol. 77 Issue 24
Academic Journal
We have investigated the vertical correlation properties of SiGe islands in a series of Si/SiGe multilayers using grazing incidence x-ray diffraction. The degree of island correlation is found to strongly depend on the thickness of the Si spacer layer separating subsequent SiGe layers. A comparison with results obtained from transmission electron microscopy demonstrates the feasibility of the x-ray diffraction method for the investigation of sample series, and an improved statistical accuracy of the obtained parameters: with x-ray diffraction, the statistical average of typically 10[sup 6]-10[sup 7] island columns is obtained, compared to only few in the case of transmission electron microscopy. © 2000 American Institute of Physics.


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