Integration of GaN with Si using a AuGe-mediated wafer bonding technique

Funato, Mitsuru; Fujita, Shizuo; Fijita, Shizuo; Fujita, Shigeo
December 2000
Applied Physics Letters;12/11/2000, Vol. 77 Issue 24
Academic Journal
This letter describes integration of GaN with Si using a AuGe alloy as a bonding material. GaN is first grown on GaAs and then GaN/GaAs/AuGe/Si and GaAs/GaN/AuGe/Si structures are fabricated by wafer bonding. For the latter structure, the GaAs substrate is removed by mechanical and chemical etching. From the current-voltage measurements of both structures, it is found that the bonded interfaces do not obstruct the carrier transport. Furthermore, the optical reflection measurements reveal that AuGe works well as a mirror, which is a suitable characteristic for the integration of GaN light-emitting devices with Si. © 2000 American Institute of Physics.


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