Dependence of substitutional C incorporation on Ge content for Si[sub 1-x-y]Ge[sub x]C[sub y] crystals grown by ultrahigh vacuum chemical vapor deposition

Kanzawa, Y.; Nozawa, K.; Saitoh, T.; Kubo, M.
December 2000
Applied Physics Letters;12/11/2000, Vol. 77 Issue 24
Academic Journal
Si[sub 1-x-y]Ge[sub x]C[sub y] crystals were grown by ultrahigh vacuum chemical vapor deposition (UHV-CVD) using Si[sub 2]H[sub 6], GeH[sub 4], and SiH[sub 3]CH[sub 3] as source gases. Although the total C content in the grown crystals increased with increasing the partial pressure of SiH[sub 3]CH[sub 3] gas, the substitutional C content saturated at a certain value. The maximum substitutional C content was found to change depending on the Ge content. As the Ge content was increased from 13 to 35 at. %, the maximum substitutional C content linearly decreased from 2.0 to 0.8 at. %. These results clearly demonstrate that the existence of Ge atoms prevents the substitutional incorporation of C atoms in Si[sub 1-x-y]Ge[sub x]C[sub y] growth by CVD. © 2000 American Institute of Physics.


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