TITLE

Scanning-tunneling-microscopy-induced optical spectroscopy of a single GaAs quantum well

AUTHOR(S)
Dumas, Ph.; Derycke, V.; Makarenko, I. V.; Houdré, R.; Guaino, P.; Downes, A.; Salvan, F.
PUB. DATE
December 2000
SOURCE
Applied Physics Letters;12/11/2000, Vol. 77 Issue 24
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have investigated the scanning-tunneling-microscopy-induced light emission originating from a single GaAs quantum well. The 5-nm-thick quantum well was confined between a 30-nm-thick AlAs barrier (grown onto a GaAs substrate) and the vacuum tunneling gap. Low currents ensured a nonintrusive investigation of the surface. Optical spectroscopy of the light emitted while injecting electrons from the tip revealed two peaks associated with the band-to-band recombination in the bulk GaAs (at 1.43 eV), and with the electronic transition in the surface quantum well (at 1.52 eV). The surface sensitivity of the technique is evidenced and the quantum efficiencies of both processes are estimated. © 2000 American Institute of Physics.
ACCESSION #
4413647

 

Related Articles

  • Observation of AlGaAs/GaAs multiquantum well structure by scanning tunneling microscopy. Gómez-Rodríguez, J. M.; Baró, A. M.; Silveira, J. P.; Vázquez, M.; González, Y.; Briones, F. // Applied Physics Letters;1/1/1990, Vol. 56 Issue 1, p36 

    We have imaged an AlGaAs/GaAs multiquantum well structure by scanning tunneling microscopy (STM). In order to localize the structure the STM is integrated in a conventional scanning electron microscope. The observed surface structure has a periodicity of ≊180 Å and shows an apparent...

  • Probing the step structure of buried metal/semiconductor interfaces using quantized electron states: The case of Pb on Si(111) 6×6-Au. Yu, Hongbin; Jiang, C.-S.; Ebert, Ph.; Shih, C.-K. // Applied Physics Letters;9/9/2002, Vol. 81 Issue 11, p2005 

    The three-dimensional step structure at the buried Pb on Si(111) 6 × 6-Au interface is determined by utilizing the presence of quantum well states. We demonstrate that the spatial step positions as well as the step heights can be extracted nondestructively and with atomic layer precision by...

  • Scanning tunneling microscope instrumentation. Kuk, Y.; Silverman, P. J. // Review of Scientific Instruments;Feb1989, Vol. 60 Issue 2, p165 

    A review is presented of the basic operating principles of scanning tunneling microscopy and spectroscopy. The physical and electronic design of the scanning tunneling microscope is discussed, and other new microscopes using similar concepts are described. Some examples of the past...

  • Vacuum tunneling of superconducting quasiparticles from atomically sharp scanning tunneling microscope tips. Pan, S. H.; Hudson, E. W.; Davis, J. C. // Applied Physics Letters;11/16/1998, Vol. 73 Issue 20 

    We report on the study of atomically sharp superconducting tips for scanning tunneling microscopy and spectroscopy. The results clearly show vacuum tunneling of superconducting quasiparticles from atomically sharp tips. Observed deviations of the energy gap of the superconducting tip from its...

  • Tunnel Spectroscopic Measurements in Air with a Scanning Tunnel Microscope. Vasil’ev, S. Yu.; Denisov, A. V. // Technical Physics;Jan2000, Vol. 45 Issue 1, p99 

    Central methodical and hardware problems in taking spectra of different types with a scanning tunneling microscope in air are briefly discussed. Ways to overcome these problems are considered. A procedure for recording a new type of tunneling spectra, namely, voltage–height (U–H)...

  • Injection of molecules onto hydrogen-terminated Si(100) surfaces via a pulse valve. Terada, Yasuhiko; Choi, Byoung-Ki; Heike, Seiji; Fujimori, Masaaki; Hashizume, Tomihiro // Journal of Applied Physics;6/15/2003, Vol. 93 Issue 12, p10014 

    Using scanning tunneling microscopy and spectroscopy, we tested a pulse-injection method for placing molecules onto hydrogen-terminated Si(100) surfaces. The target molecules were multiwalled carbon-nanotube and π-conjugated poly(3-hexylthiophene) molecules dispersed or dissolved into a...

  • Tunnel channels, spectroscopy and imaging in STM. Halbritter, J. // Applied Physics A: Materials Science & Processing;1998, Vol. 66 Issue 7, pS181 

    Abstract. Scanning tunneling microscopy (STM) obtains information about an object via tunnel channels, which severely reduce the spectroscopic and spatial information. Hence, as the first quantification step in STM, the tunnel channels must be identified. This is performed by distance and...

  • A comparison of spectroscopic and microscopic observations of ion-induced intermixing in InGaAs/InP quantum wells. Piva, P. G.; Goldberg, R. D.; Mitchell, I. V.; Chen, Huajie; Feenstra, R. M.; Weatherly, G. C.; McComb, D. W.; Aers, G. C.; Poole, P. J.; Charbonneau, S. // Applied Physics Letters;3/30/1998, Vol. 72 Issue 13 

    Using n-doped InGaAs/InP multi-quantum-well samples we compare measurements of ion-beam-induced quantum well broadening made by cross-sectional scanning tunneling microscopy and cross-sectional scanning transmission electron microscopy with the broadening calculated from the blueshift of the low...

  • Enhanced group-V intermixing in InGaAs/InP quantum wells studied by cross-sectional scanning... Chen, Huajie; Feenstra, R.M. // Applied Physics Letters;7/5/1999, Vol. 75 Issue 1, p79 

    Applies cross-sectional scanning tunneling microscopy to study InGaAs/InP quantum-well intermixing produced by phosphorus implantation. Clear strain development observed at the interfaces between quantum well and barrier layers after annealing; Implantation of phosphorus ions in a cap layer in...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics