Atomic-scale study of GaMnAs/GaAs layers

Grandidier, B.; Nys, J. P.; Delerue, C.; Stiévenard, D.; Higo, Y.; Tanaka, M.
December 2000
Applied Physics Letters;12/11/2000, Vol. 77 Issue 24
Academic Journal
Cross-sectional scanning tunneling microscopy was used to study GaMnAs diluted magnetic semiconductors grown by low temperature molecular beam epitaxy. The Ga[sub 1-x]Mn[sub x]As layer, containing a concentration of x=0.005, shows that the dominant defect in the material is the arsenic antisite. Mn ions can also be resolved and show a signature distinct from the arsenic antisites. Spectroscopic measurements are perfomed to study the variation of the Fermi level between the Ga[sub 0.995]Mn[sub 0.005]As and GaAs layers. The Mn ions act as acceptor dopants. However, for x=0.005, the Mn concentration in comparison with the As antisite concentration is too small to induce a significant change of the Fermi level from the midgap position, preventing the layer from being ferromagnetic. © 2000 American Institute of Physics.


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