Gettering of Co in Si by high-energy B ion-implantation and by p/p[sup +] epitaxial Si

Benton, J. L.; Benton, J.L.; Boone, T.; Jacobson, D. C.; Jacobson, D.C.; Rafferty, C. S.; Rafferty, C.S.
December 2000
Applied Physics Letters;12/11/2000, Vol. 77 Issue 24
Academic Journal
Detection and gettering of Co contamination in processed Si is an important issue in integrated circuit fabrication. In this work, Co was intentionally introduced into Si by ion implantation, and its diffusion monitored by secondary ion mass spectroscopy. The surface layer recombination lifetime in p/p[sup +] epitaxial Si is unaffected by the Co at doses of 1x10[sup 11] cm[sup -2] or 1x10[sup 12] cm[sup -2]. In the case of 2.5 MeV, 4x10[sup 14] B/cm[sup 2] ion implanted bulk Si, two mechanisms for Co redistribution during high temperature furnace, 900 °C, 30 min, processing are evident. First, regions of high boron concentration provide gettering sites for Co contamination. Second, the final distribution of Co in Si reflects ion-implantation induced defect evolution during annealing. Both mechanisms will operate during device processing and will control the effect of the metal on the electrical properties of the Si. © 2000 American Institute of Physics.


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