Single-electron transistor made of two crossing multiwalled carbon nanotubes and its noise properties

Ahlskog, M.; Tarkiainen, R.; Tarkainen, R.; Roschier, L.; Hakonen, P.
December 2000
Applied Physics Letters;12/11/2000, Vol. 77 Issue 24
Academic Journal
Fabricates a three-terminal nanotube device from two multiwalled nanotubes by pushing one on top of the other using an atomic-force microscope. Action of the lower nanotube as the central island of a single-electron transistor; Coulomb blockade oscillations observed on the nanotube at sub-Kelvin temperatures.


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