Silicon-based organic light-emitting diode operating at a wavelength of 1.5 μm

Curry, R. J.; Curry, R.J.; Gillin, W. P.; Gillin, W.P.; Knights, A. P.; Knights, A.P.; Gwilliam, R.
October 2000
Applied Physics Letters;10/9/2000, Vol. 77 Issue 15
Academic Journal
1.5-μm light-emitting diodes which operate at room temperature have been fabricated on silicon substrates. The devices use an erbium-containing organic light-emitting diode (OLED) structure which utilizes p[sup ++] silicon as the hole injection contact. The OLEDs use N, N′-diphenyl-N,N′-bis(3-methyl)-1,1′-biphenyl-4,4′-diamine as the hole transporting layer and erbium tris(8-hydroxyquinoline) as the electron conducting and emitting layer. © 2000 American Institute of Physics.


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