Type-II InAsSb/InAs strained quantum-well laser diodes emitting at 3.5 μm

Wilk, A.; El Gazouli, M.; El Skouri, M.; Christol, P.; Grech, P.; Baranov, A. N.; Joullié, A.
October 2000
Applied Physics Letters;10/9/2000, Vol. 77 Issue 15
Academic Journal
Mid-infrared laser diodes with compressively strained InAsSb/InAs type-II slightly coupled quantum wells are reported. These lasers, grown on InAs by molecular-beam epitaxy, have emission wavelength near 3.5 μm. They exhibit pulsed operation up to 220 K, with at 90 K threshold current density of 150 A/cm2. Ridge lasers continuous wave (cw) operated up to 130 K with cw output power of 40 mW/A/facet and a characteristic temperature T[sub 0]=40 K. © 2000 American Institute of Physics.


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