Mechanism for rapid thermal annealing improvements in undoped GaN[sub x]As[sub 1-x]/GaAs structures grown by molecular beam epitaxy

Buyanova, I. A.; Buyanova, I.A.; Pozina, G.; Hai, P. N.; Hai, P.N.; Thinh, N. Q.; Thinh, N.Q.; Bergman, J. P.; Bergman, J.P.; Chen, W. M.; Chen, W.M.; Xin, H. P.; Xin, X.P.; Tu, C. W.; Tu, C.W.
October 2000
Applied Physics Letters;10/9/2000, Vol. 77 Issue 15
Academic Journal
A systematic investigation of the effect of rapid thermal annealing (RTA) on optical properties of undoped GaNAs/GaAs structures is reported. Two effects are suggested to account for the observed dramatic improvement in the quality of the GaN[sub x]As[sub 1-x]/GaAs quantum structures after RTA: (i) improved composition uniformity of the GaN[sub x]As[sub 1-x] alloy, deduced from the photoluminescence (PL), PL excitation and time-resolved measurements; and (ii) significant reduction in the concentration of competing nonradiative defects, revealed by the optically detected magnetic resonance studies. © 2000 American Institute of Physics.


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