TITLE

Spin-dependent Coulomb blockade in a silicon-on-insulator-based single-electron transistor

AUTHOR(S)
Lee, S. D.; Lee, S.D.; Park, K. S.; Park, K.S.; Park, J. W.; Kim, J.; Moon, Y. M.; Park, J.W.; Choi, Jung B.; Moon, Y.M.; Yoo, K.-H.
PUB. DATE
October 2000
SOURCE
Applied Physics Letters;10/9/2000, Vol. 77 Issue 15
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report low-temperature conductance measurement on a Coulomb-blockaded dot in a silicon-on-insulator-based single-electron transistor with in-plane side gates. The linear conductance for 4.2 K at zero magnetic field exhibits up to three paired peaks, indicating simple alternating odd (spin 1/2)-even(spin 0) filling. Three intrapair spacings are found to be nearly a constant value, corresponding to the single charging energy U, whereas two interpair spacings are different which are associated with U+ΔE[sub 1] and U+ΔE[sub 2], i.e., successive quantized level spacings added to U. The quantized level spacings were also revealed in the nonlinear current staircases. © 2000 American Institute of Physics.
ACCESSION #
4413443

 

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