TITLE

Approach to enhance deuterium incorporation for improved hot carrier reliability in metal-oxide-semiconductor devices

AUTHOR(S)
Cheng, Kangguo; Kangguo Cheng; Lee, Jinju; Jinju Lee; Lyding, Joseph W.
PUB. DATE
October 2000
SOURCE
Applied Physics Letters;10/9/2000, Vol. 77 Issue 15
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The deuterium isotope effect has been widely demonstrated to improve hot-carrier reliability in metal-oxide-semiconductor transistors. Most of the interface traps, however, may have been passivated by hydrogen before the final deuterium anneal due to the ubiquitous presence of hydrogen in modern complementary metal-oxide-semiconductor processing technology. Therefore, effective deuteration requires both deuterium diffusion to the SiO[sub 2]-Si interface and displacement of the previously bonded hydrogen. We have introduced a "prestress" process in which hydrogen is depassivated before deuterium annealing. We found that the prestressed transistors are more robust to hot-carrier stress than control transistors without the prestress. We have also found that the replacement of hydrogen with deuterium is the rate-limiting step for deuterium incorporation at the SiO[sub 2]-Si interface. With the prestress, a lower deuterium annealing temperature can be applied without compromising the reliability improvement. © 2000 American Institute of Physics.
ACCESSION #
4413442

 

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