TITLE

Semiconductor sieves as nonlinear optical materials

AUTHOR(S)
Tiginyanu, I. M.; Tiginyanu, I.M.; Kravetsky, I. V.; Kravetsky, I.V.; Monecke, J.; Cordts, W.; Marowsky, G.; Hartnagel, H. L.; Hartnagel, H.L.
PUB. DATE
October 2000
SOURCE
Applied Physics Letters;10/9/2000, Vol. 77 Issue 15
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Electrochemical etching techniques were used to fabricate semiconductor sieves of gallium phosphide, i.e., two-dimensionally nanostructured membranes exhibiting an enhanced optical second harmonic generation (SHG) in comparison with the bulk material. The SHG rotational and fundamental polarization dependencies studied under sample excitation by a 1064-nm Nd-YAG laser beam indicate optical homogeneity and uniaxial symmetry of the membranes. The artificial anisotropy and the enhanced nonlinear optical response induced by nanotexturization make semiconductor sieves very promising for use in all-optical devices. © 2000 American Institute of Physics.
ACCESSION #
4413423

 

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