TITLE

Interface corrugation in GaAs/AlAs (311)A superlattices

AUTHOR(S)
Vorob'ev, A. B.; Vorob'ev, A.B.; Gutakovsky, A. K.; Gutakovsky, A.K.; Prinz, V. Ya.; Preobrazhenskii, V. V.; Preobrazhenskii, V.V.; Putyato, M. A.; Putyato, M.A.
PUB. DATE
November 2000
SOURCE
Applied Physics Letters;11/6/2000, Vol. 77 Issue 19
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
GaAs/AlAs (311)A superlattices are studied by cross-sectional high-resolution transmission electron microscopy X-HRTEM. An anisotropic relief on GaAs/AlAs (311)A interfaces with a height up to 6 ML is observed, predominantly aligned along the [2¯33] direction. A strong (up to 12 ML) highly anisotropic modulation of the thickness of the GaAs layers is found, which can explain the in-plane anisotropy of carrier transport previously observed in this system. At the same time, the thickness of the AlAs layers appeared to be nearly constant. The X-HRTEM studies have revealed no 32 Å periodicity of the GaAs/AlAs (311)A interfacial structure, although a distinct (8x1) surface reconstruction of both GaAs and AlAs surfaces was observed by reflection high-energy electron diffraction during growth. © 2000 American Institute of Physics.
ACCESSION #
4413260

 

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