Piezoelectric effects in In[sub 0.5]Ga[sub 0.5]As self-assembled quantum dots grown on (311)B GaAs substrates

Patane, A.; Levin, A.; Polimeni, A.; Schindler, F.; Main, P. C.; Main, P.C.; Eaves, L.; Henini, M.
November 2000
Applied Physics Letters;11/6/2000, Vol. 77 Issue 19
Academic Journal
Photocurrent spectroscopy is used to investigate the quantum-confined Stark shift of In[sub 0.5]Ga[sub 0.5]As/GaAs self-assembled quantum dots grown on (100) and (311)B planes. By comparing the Stark shift for dots grown on (100) and (311)B planes, we find that in the (311)B dots, the electron and hole wave functions are displaced by a strain-induced piezoelectric field directed from the apex to the base of the dots. © 2000 American Institute of Physics.


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