TITLE

Implantation of size-selected Si clusters into graphite

AUTHOR(S)
Neuendorf, R.; Palmer, R. E.; Palmer, R.E.; Smith, R.
PUB. DATE
November 2000
SOURCE
Applied Physics Letters;11/6/2000, Vol. 77 Issue 19
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Molecular dynamics simulations have been performed to explore the implantation of silicon clusters into a graphite substrate to well-defined depths. The cluster sizes range from N=20 up to N=200 atoms per cluster, deposited with kinetic energies from E=500 eV up to E=5000 eV per cluster. We find that the clusters remain intact as coherent, amorphous structures after implantation. The implantation depth is well defined and scales with the kinetic energy of the clusters and the inverse of the cross-sectional area. This indicates a constant decelerating force, associated with the lateral displacement of carbon atoms as the cluster "drills a hole" in the substrate. The main dissipation channels for the energetic silicon clusters are the creation of phonons in the graphite substrate and the breaking of C-C bonds. © 2000 American Institute of Physics.
ACCESSION #
4413251

 

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