Optical properties of a Fabry-Pérot microcavity with Er-doped hydrogenated amorphous silicon active layer

Dukin, A. A.; Dukin, A.A.; Feoktistov, N. A.; Feoktistov, N.A.; Golubev, V. G.; Golubev, V.G.; Medvedev, A. V.; Medvedev, A.V.; Pevtsov, A. B.; Pevtsov, A.B.; Sel'kin, A. V.; Sel'kin, A.V.
November 2000
Applied Physics Letters;11/6/2000, Vol. 77 Issue 19
Academic Journal
Fabry-Pérot hydrogenated amorphous silicon (a-Si:H)/amorphous-SiO[sub x]:H microcavities with an erbium-doped a-Si:H active region are fabricated by a plasma-enhanced chemical-vapor deposition technique in a single technological cycle without exposure to air between the intermediate operations. A metalorganic compound is used to incorporate erbium in the active a-Si:H layer. Transmission, reflection, and photoluminescence spectra of the microcavities are measured. The experimental data are compared to theoretical calculations performed in terms of field amplitudes generated by stochastic excitation sources. © 2000 American Institute of Physics.


Related Articles

  • Strong room-temperature photoluminescence of hydrogenated amorphous silicon oxide and its.... Chi-Huei Lin; Si-Chen Lee // Applied Physics Letters;8/16/1993, Vol. 63 Issue 7, p902 

    Examines the room temperature photoluminescence (PL) of hydrogenated amorphous silicon oxide fabricated by plasma enhanced chemical vapor deposition. Effect of annealing treatments on PL; Comparison of PL characteristics between amorphous silicon oxide and porous silicon; Origin of the PL...

  • Schottky contacts on amorphous carbon: A more reliable approach. Paul, S.; Clough, F. J. // Applied Physics Letters;3/5/2001, Vol. 78 Issue 10, p1415 

    It is considered impossible to form Schottky contacts on amorphous hydrogenated carbon (a-C:H). Taking the lead from our earlier work in which we report the formation of Schottky contacts on radio frequency plasma enhanced chemical vapor deposition (rf PECVD) grown a-C:H films, here we present a...

  • Photoluminescence from nanocrystallites embedded in hydrogenated amorphous silicon films.... Xiang-na Liu; Xiao-wei Wu; Xi-mao Bao; Yu-liang He // Applied Physics Letters;1/10/1994, Vol. 64 Issue 2, p220 

    Examines the visible photoluminescence at room temperature of nanocrystallites in hydrogenated amorphous silicon films. Preparation of films by plasma enhanced chemical vapor deposition using hydrogen-diluted silane; Influence of quantum size effect on emission above the band gap;...

  • Pressure influence on the decay of the photoluminescence in Si nanopowder grown by.... Roura, P.; Costa, J. // Applied Physics Letters;11/6/1995, Vol. 67 Issue 19, p2830 

    Examines the influence of pressure on the decay of photoluminescence in silicon nanopowder grown by plasma enhanced chemical vapor deposition. Salient characteristics between gas interaction and emitting centers; Analysis with different inert gases; Comparison with other nanostructured silicon...

  • Intense violet-blue photoluminescence in as-deposited amorphous Si:H:O films. Song Tong; Xiang-na Liu // Applied Physics Letters;8/4/1997, Vol. 71 Issue 5, p698 

    Examines the photoluminescence (PL) in amorphous-silicon:hydrogen:oxygen films deposited by plasma enhanced chemical vapor deposition. Bands of observed PL at room temperatures; Characteristics of the violet-blue emission; Ascription of the PL peaks to silicon-oxygen related species and quantum...

  • Effect of oligomers on the growth of amorphous silicon films in a PECVD reactor. Gorbachev, Yu.E. // Technical Physics;Jun2006, Vol. 51 Issue 6, p733 

    A plasma-chemical model of processes in a PECVD reactor is constructed that is an extension of the earlier model and takes into account the formation of oligomers SinHm ( n = 5). The corresponding scheme of chemical reactions is developed, and simulation of film growth is carried out. It is...

  • Microstructures and photoluminescence of hydrogenated amorphous carbon films produced by using organic hydrocarbon source. Xu, J.; Li, W.; Ma, T.; Chen, K.; Li, Z.; Lu, W. // Applied Physics A: Materials Science & Processing;2000, Vol. 71 Issue 6, p651 

    Deals with a study which prepared thin films of hydrogenated amorphous carbon by using organic hydrocarbon source, xylene in plasma-enhanced chemical vapor deposition system. Characterization of the microstructures by using Fourier transform infrared and Raman scattering spectra; How...

  • Structural properties of amorphous silicon carbide films by plasma-enhanced chemical vapor deposition. Choi, W. K.; Chan, Y. M.; Ling, C. H.; Lee, Y.; Gopalakrishnan, R.; Tan, K. L. // Journal of Applied Physics;1/15/1995, Vol. 77 Issue 2, p827 

    Presents a study which examined the structural properties of amorphous silicon carbide films by plasma-enhanced chemical vapor deposition. Experimental methods; Results of infrared spectroscopy; Results of Raman spectroscopy.

  • Crystallization of hydrogenated amorphous silicon films by exposure to femtosecond pulsed laser radiation. Volodin, V.; Kachko, A. // Semiconductors;Feb2011, Vol. 45 Issue 2, p265 

    To crystallize hydrogenated amorphous silicon films on glass substrates, pulsed Ti-sapphire laser radiation is used, with a pulse duration less than 30 fs. The initial films are grown by plasma-enhanced chemical-vapor deposition at the temperatures 200 and 250°C. The structural properties of...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics