Stokes shift in InGaN epitaxial layers

Zheng, Ruisheng; Ruisheng Zheng; Taguchi, Tsunemasa
November 2000
Applied Physics Letters;11/6/2000, Vol. 77 Issue 19
Academic Journal
By analyzing the features of quasi-low-dimensional structures, we recognize that the Stokes shift is a characteristic of quantum-wire and quantum-disk systems. Including the smearing effect of the broad distribution of sizes of the nanostructures into consideration, we found that the Stokes shift is proportional to the light-emission peak energy of the systems. We propose that the Stokes shift observed in the optical spectra of InGaN epitaxial layers might originate from the self-formed quantum-wire and/or quantum-disk structures in the epitaxial layers. © 2000 American Institute of Physics.


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