III-N semiconductor growth with activated nitrogen: State-specific study of A[sup 3]Σ[sub u][sup +] metastable N[sub 2] molecules

Jordan, D. C.; Jordan, D.C.; Tsong, I. S. T.; Tsong, I.S.T.; Smith, David J.; Wilkens, B. J.; Wilkens, B.J.; Doak, R. B.; Doak, R.B.
November 2000
Applied Physics Letters;11/6/2000, Vol. 77 Issue 19
Academic Journal
High quality epitaxial III-N semiconductor films, ranging in thickness from 300 to 900 Å, have been grown using A[sup 3]Σ[sub u][sup +] metastable nitrogen molecules. The work employed a corona discharge supersonic free-jet to generate a molecular beam containing exclusively the A[sup 3]Σ[sub u][sup +] activation state in an otherwise ground state N[sub 2] beam. AlN films were grown on 6H-SiC(0001) and Si(001) substrates. GaN films were grown on the same substrates and on buffer layers of AlN deposited in situ on 6H-SiC(0001). The N-atom incorporation efficiency (the number of N atoms attaching to a III-N surface per incident A[sup 3]Σ[sub u][sup +] molecule) approached 100% and was independent of substrate temperature from 600 to 900 °C, implying direct molecular chemisorption of the A[sup 3]Σ[sub u][sup +]. These measurements support theoretical predictions that A[sup 3]Σ[sub u][sup +] is an ideal precursor for III-N growth. © 2000 American Institute of Physics.


Related Articles

  • Formation of threading defects in GaN wurtzite films grown on nonisomorphic substrates. Sverdlov, B.N.; Martin, G.A. // Applied Physics Letters;10/2/1995, Vol. 67 Issue 14, p2063 

    Investigates the causes of a dense network of threading defects in epitaxial gallium nitride films. Influence of substrate/film interface on threading defects; Inherence of the defects in the epitaxy of wurtzite films on nonisomorphic substrates; Effects of the defects on the properties of...

  • Growth of GaN on sapphire (0001) using a supersonic jet of plasma-generated atomic nitrogen. Selidj, A.; Ferguson, B.A.; Mattord, T.J.; Streetman, B.G.; Mullins, C.B. // Applied Physics Letters;6/3/1996, Vol. 68 Issue 23, p3314 

    Investigates the epitaxial growth of gallium nitride (GaN) on sapphire using gallium effusion cell and supersonic jet of nitrogen atoms. Excitation of nitrogen in helium mixture; Properties of GaN films; Measurement of GaN growth rate; Relation of the crystalline quality to wafer temperature.

  • Morphology of luminescent GaN films grown by molecular beam epitaxy. Trager-Cowan, C.; O'Donnell, K.P. // Applied Physics Letters;1/15/1996, Vol. 68 Issue 3, p355 

    Investigates the morphology of luminescent gallium nitride films grown by molecular beam epitaxy. Application of scanning electron and atomic force microscopy; Analysis of the cathodoluminescence spectra of films; Identification of exciton peaks.

  • Elastic strain relief in nitridated Ga metal buffer layers for epitaxial GaN growth. Kim, Yihwan; Shapiro, Noad A.; Feick, Henning; Armitage, Robert; Weber, Eicke R.; Yang, Yi; Cerrina, Franco // Applied Physics Letters;2/12/2001, Vol. 78 Issue 7, p895 

    Gallium nitride epitaxial layers were grown on sapphire by molecular-beam epitaxy using nitridated gallium metal films as buffer layers. The mechanical properties of the buffer layers were investigated and correlated with their chemical composition as determined by synchrotron radiation...

  • Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxy. Hsu, J. W. P.; Manfra, M. J.; Chu, S. N. G.; Chen, C. H.; Pfeiffer, L. N.; Molnar, R. J. // Applied Physics Letters;6/18/2001, Vol. 78 Issue 25, p3980 

    The impact of the Ga/N ratio on the structure and electrical activity of threading dislocations in GaN films grown by molecular-beam epitaxy is reported. Electrical measurements performed on samples grown under Ga-rich conditions show three orders of magnitude higher reverse bias leakage...

  • Microstructure of laterally overgrown GaN layers. Liliental-Weber, Z.; Cherns, David // Journal of Applied Physics;6/15/2001, Vol. 89 Issue 12, p7833 

    Transmission electron microscopy study of plan-view and cross-section samples of epitaxial laterally overgrown (ELOG) GaN samples is described. Two types of dislocation with the same type of Burgers vector but different line direction have been observed. It is shown that threading edge...

  • Low-etch-pit-density GaN substrates by regrowth on free-standing GaN films. Tsai, Chiung-Chi; Chang, Chen-Shiung; Chen, Tsung-Yu // Applied Physics Letters;5/20/2002, Vol. 80 Issue 20, p3718 

    In this study, GaN substrates with low-density etch pits were obtained by regrowth on free-standing GaN films (two steps) by hydride vapor-phase epitaxy (HVPE). The etch-pit density was lower than 4 x 10[sub 4] cm[sup -2] by atomic-force microscopy. The density is significantly lower than that...

  • Growth of GaN(0001)1x1 on Al[sub 2]O[sub 3](0001) by gas-source molecular beam epitaxy. Powell, R.C.; Lee, N.-E. // Applied Physics Letters;5/18/1992, Vol. 60 Issue 20, p2505 

    Demonstrates the growth of gallium nitride (GaN)(0001)1x1 semiconductor films on Al[sub 2]O[sub 3](0001) by gas-source molecular beam epitaxy. Application of in situ reflection high-energy electron diffraction analysis; Range of GaN carrier mobilities; Factors responsible for film defects.

  • Strong circular photogalvanic effect in ZnO epitaxial films. Zhang, Q.; Wang, X. Q.; Yin, C. M.; Shen, B.; Chen, Y. H.; Chang, K.; Ge, W. K. // AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p703 

    A strong circular photogalvanic effect (CPGE) in ZnO epitaxial films was reported under interband excitation. It was observed that CPGE current is as large as 100 nA/W in ZnO, which is about one order in magnitude higher than that in InN film while the CPGE currents in GaN films are not...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics