TITLE

III-N semiconductor growth with activated nitrogen: State-specific study of A[sup 3]Σ[sub u][sup +] metastable N[sub 2] molecules

AUTHOR(S)
Jordan, D. C.; Jordan, D.C.; Tsong, I. S. T.; Tsong, I.S.T.; Smith, David J.; Wilkens, B. J.; Wilkens, B.J.; Doak, R. B.; Doak, R.B.
PUB. DATE
November 2000
SOURCE
Applied Physics Letters;11/6/2000, Vol. 77 Issue 19
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
High quality epitaxial III-N semiconductor films, ranging in thickness from 300 to 900 Å, have been grown using A[sup 3]Σ[sub u][sup +] metastable nitrogen molecules. The work employed a corona discharge supersonic free-jet to generate a molecular beam containing exclusively the A[sup 3]Σ[sub u][sup +] activation state in an otherwise ground state N[sub 2] beam. AlN films were grown on 6H-SiC(0001) and Si(001) substrates. GaN films were grown on the same substrates and on buffer layers of AlN deposited in situ on 6H-SiC(0001). The N-atom incorporation efficiency (the number of N atoms attaching to a III-N surface per incident A[sup 3]Σ[sub u][sup +] molecule) approached 100% and was independent of substrate temperature from 600 to 900 °C, implying direct molecular chemisorption of the A[sup 3]Σ[sub u][sup +]. These measurements support theoretical predictions that A[sup 3]Σ[sub u][sup +] is an ideal precursor for III-N growth. © 2000 American Institute of Physics.
ACCESSION #
4413242

 

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