Energy loss spectra of group III nitrides

Gavrilenko, V. I.; Gavrilenko, V.I.; Wu, R. Q.; Wu, R.Q.
November 2000
Applied Physics Letters;11/6/2000, Vol. 77 Issue 19
Academic Journal
Electron energy loss spectra (EELS) of cubic and hexagonal BN, AlN, GaN, and InN have been calculated by using the first principles full potential linearized augmented plane wave method. Accurate calculations of linear optical functions are performed in a photon energy range up to 60 eV. The electron excitation energies related to the bulk plasmons are obtained for both reflection and transmission geometries. The predicted EELS data are discussed in comparison with available experimental results. © 2000 American Institute of Physics.


Related Articles

  • Synthesis of boron nitride nanofibers and measurement of their hydrogen uptake capacity. Ma, Renzhi; Bando, Yoshio; Sato, Tadao; Golberg, Dmitri; Zhu, Hongwei; Xu, Cailu; Wu, Dehai // Applied Physics Letters;12/30/2002, Vol. 81 Issue 27, p5225 

    High-purity boron nitride (BN) nanofibers with diameters ranging from 30 to 100 nm were synthesized. Electron energy loss spectroscopy revealed that they have stoichiometric BN composition. The hydrogen uptake capacity measurements showed that the fibers could adsorb 2.9 wt % hydrogen under...

  • Electron energy loss near-edge structures of cubic Si[sub 3]N[sub 4]. Tanaka, Isao; Mizoguchi, T.; Sekine, T.; He, Hongliang; Kimoto, K.; Kobayashi, T.; Mo, Shang-Di; Ching, W. Y. // Applied Physics Letters;4/9/2001, Vol. 78 Issue 15, p2134 

    Electron energy loss near-edge structures of the newly discovered cubic-Si[sub 3]N[sub 4] at the Si L[sub 2,3], edge and N K edge have been measured. The same edges were calculated using a first-principles supercell approach, including the core-hole interaction. The experimental spectra at the...

  • Nonuniformities in GaN/AlN quantum wells. Mkhoyan, K.A.; Silcox, J.; Wu, H.; Schaff, W.J.; Eastman, L.F. // Applied Physics Letters;9/29/2003, Vol. 83 Issue 13, p2668 

    Composition sensitive annular dark field imaging and electron energy-loss spectroscopy were used to determine long-range uniformities of GaN quantum wells and the sharpness of their interfaces grown in AlN matrix by molecular beam epitaxy. Low magnification annular dark field images reveal...

  • Fine structure of boron nitride nanotubes produced from carbon nanotubes by a substitution reaction. Golberg, D.; Han, W. // Journal of Applied Physics;8/15/1999, Vol. 86 Issue 4, p2364 

    Presents information on a study which examined the precise structural investigation of multiwalled boron nitride nanotubes by means of the high-resolution transmission electron microscopy and electron energy loss spectroscopy. Use of the substitution chemical reaction technique in the...

  • Compositional analysis of ultrathin silicon oxynitride gate dielectrics by quantitative electron energy loss spectroscopy. Stegmann, Heiko; Zschech, Ehrenfried // Applied Physics Letters;12/15/2003, Vol. 83 Issue 24, p5017 

    Silicon oxynitrides provide dielectric materials with improved properties for further enhanced metal–oxide–semiconductor field effect transistors. Spatially resolved quantitative analysis of the elemental composition across the gate dielectric is required to optimize this ultrathin...

  • High energy-resolution EELS study of the electronic structure of boron nitride cones. Terauchi, M.; Kawana, M.; Tanaka, M.; Suzuki, K.; Ogino, A.; Kimura, K. // AIP Conference Proceedings;2001, Vol. 590 Issue 1, p133 

    Electron energy-loss spectra were obtained from a single boron-nitride cone (BN cone) with an apex angle of 20 degrees, which is made of curved BN layers. The spectra obtained from the tip region showed the pi plasmon peak at 7.4eV, which is smaller than that of bulk hexagonal boron-nitride...

  • Effects of Surface Oxide on the Nitridation Behavior of Aluminum Particles. Kim, Sung-Hoon; Noh, Jae-Hong; Ahn, Jae-Pyoung; Lee, Jae-Chul; Kwon, Hoon; Lee, Jaegab; Lee, Kon-Bae; Yang, Heang // Metallurgical & Materials Transactions. Part A;Jan2015, Vol. 46 Issue 1, p496 

    A detailed transmission electron microscopy study coupled with electron energy loss spectroscopy was conducted on AlN formed by the direct nitridation of Al particles under nitrogen atmosphere. The nitridation mechanism comprised two steps: the formation of AlN shell on Al particles and the...

  • Growth of thin, crystalline oxide, nitride, and oxynitride films on NiAl and CoGa surfaces. Franchy, R.; Schmitz, G.; Gassmann, P.; Bartolucci, F. // Applied Physics A: Materials Science & Processing;1997, Vol. 65 Issue 6, p551 

    The growth of thin, well-ordered oxide, nitride, and oxynitride films on NiAl and CoGa surfaces was investigated by means of high-resolution electron energy loss spectroscopy (EELS), low-energy electron diffraction (LEED), Auger electron spectroscopy (AES), and scanning tunneling microscopy...

  • Electron energy-loss spectroscopy characterization of pyramidal defects in metalorganic vapor-phase epitaxy Mg-doped GaN thin films. Benaissa, M.; Vennégues, P.; Beaumont, B.; Gibart, P.; Saikaly, W.; Charai, A. // Applied Physics Letters;10/2/2000, Vol. 77 Issue 14 

    In the present letter, Mg-doped GaN thin films grown by metalorganic vapor-phase epitaxy were studied using parallel electron energy-loss spectroscopy in a transmission electron microscope. A microstructural characterization of such thin films showed the presence of pyramidal defects (PDs) with...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics